Applied Materials, Inc.

Kenneth MacWilliams

Christopher Dennis Bencher

Mehul B Naik

Zhenjiang Cui

Huixiong Dai

Hui W Chen

Raymond Hoiman Hung

Michael Duane

Yongmei Chen

Jen Shu

Chorng-Ping Chang

Christopher Siu Wing Ngai

Susie Xiuru Yang

Xumou Xu

Jiahua Yu

Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Double exposure patterning with carbonaceous hardmask

Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.

Air gap formation and integration using a patterning cap

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Los Altos Hills, CA, United States of America

Kenneth MacWilliams