Motorola Corporation

Kenneth M Seddon

Gregory W Grynkewich

Jeffrey Pearse

Vida Ilderem

Heidi L Denton

Andrew Mirza

A sensor (10,30) is formed that does not require a bonding process in an oxygen rich or vacuum ambient. In a first embodiment, a port (14), a channel (15) and an opening (18) are used to provide an oxidizing ambient to a cavity (13). During an oxidation process, the cavity (13) is sealed and any remaining oxidizing ambient is consumed to form a sealed cavity that is under a vacuum pressure. In an alternate embodiment, a cavity (32) is formed in a first substrate (31). The cavity (32) is covered by a second substrate (36) and an opening (33,34) is formed in the second substrate (36) above the cavity (32). These openings (33,34) allow an oxidizing ambient to enter the cavity (32).

Sensor device having a pathway and a sealed cavity

Portions of a semiconductor device (10,30) are formed from a dielectric layer (16,38,46) which is deposited using a plasma enhanced chemical vapor deposition (PECVD) process which adds trimethylphosphite as a dopant source during the deposition. A first embodiment forms sidewall spacers (17) adjacent to a gate structure (14) and forms doped regions (19) under the sidewall spacers (17) by annealing the dielectric layer (16) and driving phosphorus into a substrate (11). A second embodiment uses the trimethylphosphite doped film as an interlevel dielectric layer (38) which can be planarized to provide a flat surface for the formation of metal interconnect lines. A third embodiment of the present invention uses the trimethylphosphite doped film as a passivation layer (46) which is deposited in a single step process and has a phosphorus concentration to getter mobile ions.

Growing community of inventors

Gilbert, AZ, United States of America

Kenneth M Seddon