International Business Machines Corporation

Freudenberg Nonwovens

Kenneth M Davis

Shyng-Tsong Chen

Kenneth Parker Rodbell

Michael F Lofaro

Oscar Kai Chi Hsu

Fen Fen Jamin

Jean Vangsness

David Lee Rath

Mahadevaiyer Krishnan

William Francis Landers

Karl E Boggs

Timothy Joseph Dalton

Katherine Lynn Saenger

Sandra Guy Malhotra

Andrew Herbert Simon

Chandrasekhar Narayan

Kaushik Arun Kumar

Chao-Kun Hu

Wei-Tsu Tseng

Judith Marie Rubino

Adam D Ticknor

Michael L Passow

Steffen K Kaldor

Bradley Paul Jones

Sean P E Smith

David S Gilbride

Scott Clayton Billings

John Anthony Fitzsimmons

Donald Francis Canaperi

Richard Anthony Conti

Eric Jeffrey White

William J Cote

Francis R Krug, Jr

Jeremy K Stephens

Daewon Yang

James Anthony Tornello

Scott Alan Estes

Michael T Brigham

Michael A Cobb

Edward Jack Gordon

Michael Joseph MacDonald

James Hannah

Ronald D Fiege

Robert M Merkling, Jr

Ralph R Comulada

Dean Allen Schaffer

Alex Siu Keung Chung

George James Slusser

A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The loose fibers define and the precursors were mixed first with curatives, then mold into a pad form. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers.

Fiber embedded polishing pad

An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

Copper recess process with application to selective capping and electroless plating

A method of making a polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The method comprising placing the fibers and the precursors in a cavity of a mold for shaping the polishing pad; applying a differential pressure across a mold cavity, where the differential pressure and the amount of precursors are sufficient to cause the precursors to fill the interstices substantially completely before completion of the reaction; and applying sufficient heat to the mold to at least partially cure the polishing pad by causing the precursors to react.

Polishing pads with polymer filled fibrous web, and methods for fabricating and using same

A process for providing regions of substantially lower fluorine content in a fluorine-containing dielectric comprises exposing the fluorine-containing dielectric to a reactive species to form volatile byproducts.

Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Slurry for mechanical polishing (CMP) of metals and use thereof

A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers. The fibers may be separate, or in the form of a woven or non-woven web.

Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves.

Grooved polishing pads and methods of use

Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves. Grooves in the polishing surface may be provided with outlets through which a polishing slurry may flow while the polishing surface is in contact with a workpiece surface.

A system for chemical-mechanical polishing is described which includes a wafer backing film having concentric first and second portions. The portions of the wafer backing film are of different materials. The second portion of the wafer backing film has an annular shape and surrounds the first portion; a backing shim is used to adjust the first portion and second portion with respect to each other in a vertical direction. The first and second portions of the wafer backing film and the backing shim are mounted on an adhesive assembly film, thereby forming an assembly for mounting on a wafer carrier. The second portion of the wafer backing film is less compressible than the first portion, and is adjusted in the vertical direction so that the outer edge of the wafer is substantially sealed when backside air is applied to the wafer during a film removal process.

Chemical-mechanical polishing system having a bi-material wafer backing film assembly

Grooves are formed in a COD pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).

Polishing pad grooving method and apparatus

A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

Piezo-actuated CMP carrier

An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

Regeneration of chemical mechanical polishing pads in-situ

A system for chemical-mechanical polishing is described which includes a wafer backing film having concentric first and second portions, and a wafer carrier having corresponding first and second portions for mounting the portions of the wafer backing film thereon. The portions of the wafer backing film are of different materials. The second portion of the wafer backing film has an annular shape and surrounds the first portion; the second portion of the wafer carrier is adjustable with respect to the first portion of the wafer carrier in a vertical direction. The second portion of the wafer backing film is less compressible than the first portion, and is adjusted in the vertical direction so that the outer edge of the wafer is substantially sealed when backside air is applied to the wafer during a film removal process.

Chemical-mechanical polishing system having a bi-material wafer backing film and two-piece wafer carrier

Growing community of inventors

Newburgh, NY, United States of America

Kenneth M Davis