Rockwell International Corporation

Kenneth L Hess

Edward R Gertner

Charles R Younger

Stuart J Irvine

Shawn L Johnston

Stanley W Zehr

Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.

Technique for doping mercury cadmium telluride MOCVD grown crystalline

Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.

Technique for doping MOCVD grown crystalline materials using free

A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C.sub.2 H.sub.5).sub.3 In or, a source of a group V element, a source of the transition element, such as cobalt nitrosyl tricarbonyl CO(NO)(CO).sub.3, and a source of phosphorus, to the substrate heated in an inert or reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.

Growing community of inventors

Yorba Linda, CA, United States of America

Kenneth L Hess