Dow Global Technolgoies LLC

The Dow Chemical Company

Kenneth L Foster

Gene D Rose

Robert A Kirchhoff

James R Stahlbush

Jason Q Niu

Shaoguang Feng

Ray E Drumright

Stephen F Hahn

David J Brennan

Deidre A Strand

Michael Inbasekaran

James P Godschalx

Dean M Welsh

Paul H Townsend, Iii

Suresh Subramonian

Arthur S Teot

Michael J Radler

Lynne K Mills

Yongfu Li

Mitchell G Dibbs

Q Jason Niu

Kenneth L Snyder, Jr

Paul Henson Townsend

Natalie N Westphal

JoLee M Dominowski

Youngfu Li

Paul H Iii Townsend

The instant invention is a process for planarizing a microelectronic substrate with a cross-linked polymer dielectric layer, comprising the steps of: (a) heating such a substrate coated with a layer comprising an uncured cross-linkable polymer and a glass transition suppression modifier to a temperature greater than the glass transition temperature of the layer, the temperature being less than the curing temperature of the uncured cross-linkable polymer to form a substrate coated with a heat flowed layer; and (b) heating the substrate coated with the heat flowed layer to a curing temperature of the uncured cross-linkable polymer of the heated layer to cure the uncured cross-linkable polymer to form a planarized substrate wherein the percent planarization at 100 micrometers is greater than fifty percent. The instant invention is a microelectronic device made using the above-described process. The instant invention is a composition of matter, comprising: an essentially solvent free composition comprising an uncured cross-linkable polymer and a glass transition suppression modifier, the composition having a glass transition temperature sufficiently less than the curing temperature of the uncured composition so that if the uncured composition is heated to a temperature above its glass transition temperature but below its curing temperature, the uncured composition will flow.

Planarized microelectronic substrates

A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices

A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.

Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices

The present invention relates to a method for preparing polymeric films, preferably electroactive films, with enhanced physical properties by the steps of applying to a substrate a solution of a polymer containing pendant labile solubilizing groups, then removing the solvent and a sufficient concentration of the labile solubilizing groups render the polymer less soluble in the solvent than before the labile groups were removed. It is believed that the removal of pendant soluble groups a) permits optimization of the semiconducting backbone for charge transport performance, b) allows direct control of microstructure in the final film, and c) renders the final film more robust during subsequent process steps needed to construct multilayer devices.

Method of preparing an insoluble polymer film on a substrate from a soluble polymer containing labile solubilizing groups

A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.

Process for making air gap containing semiconducting devices and resulting semiconducting device

This invention is a composition comprising (a) an oligomer or polymer dispersible in an organic solvent, having a low dielectric constant, or being curable to form a material having a low dielectric constant, (b) at least one organic solvent and (c) less than 1000 parts by weight of a polymeric coating additive per million parts by weight of total composition (ppm). The polymeric additive is characterized in that it is miscible with component (a) and the solvent system but becomes incompatible with the mixture of component (a) and solvent during the coating process.

Spin-on-dielectric compositions with coating enhancer

A water treatment module and process for treating power plant condensate water utilizing a sulfonated ion exchange resin comprising copolymer beads having an interpenetrating polymer network of at least two polymer components wherein at least one of the polymer components is derived from a monomer mixture having a styrenic content less than about 80 molar percent. In one preferred embodiment the multiple polymer components include: (i) a first polymer component derived from a first monomer mixture comprising a monovinylidene monomer having a styrenic content less than about 50 molar percent and (ii) a second polymer component derived from a second monomer mixture comprising: a second monovinylidene monomer having a styrenic content greater than about 50 molar percent and a crosslinking agent. The ratio of the molar percent crosslinking agent of the first polymer component to the second polymer component is less than about 0.7. The present invention is more effective at removing colloidal iron from condensate water, releases fewer total leachables, releases leachables of a lower molecular weight and/or releases leachables having a reduced sulfonate content.

Treatment of power plant condensate water with ion exchange resins

Gel-type copolymer beads are described which are useful as ion exchange resins such as those used in the treatment of power plant condensate water. The subject copolymer beads possess an interpenetrating polymer network of at least two polymer components including: (i) a first polymer component derived from a first monomer mixture comprising a first monovinylidene monomer having a styrenic content less than about 50 molar percent and (ii) a second polymer component derived from a second monomer mixture comprising: a second monovinylidene monomer having a styrenic content greater than about 50 molar percent and a second crosslinking agent. The ratio of the molar percent crosslinking agent of the first polymer component to the second polymer component is less than about 0.7. Methods for making the subject beads and methods for their use as ion exchange resins for treating aqueous solutions are also provided.

Gel-type copolymer bead and ion-exchange resins made therefrom

Cation exchange resins are prepared by sulfonating copolymer beads in the presence of a swelling solvent under pressure. Pressure sulfonation shortens cycle times and requires less energy while maintaining or improving product quality.

Manufacture of cation exchange resins by pressurized sulfonation

Bleach compositions, such as aqueous sodium hypochlorite formulations, are thickened by admixing the composition with a viscoelastic surfactant. Visco-elastic surfactants comprise surfactant ions and organic counterions that associate in the bleach composition to form the viscoelastic surfactant. Thickened bleach compositions of this invention exhibit bleach stability, phase stability, and viscosity stability for acceptably long periods of time. The thickened bleach compositions can be employed as nonmisting sprays and streams which will stick to vertical surfaces without substantial dripping and can be applied to various substrates using a dispensing device.

Aqueous bleach compositions thickened with a viscoelastic surfactant

Substantially oil-free aqueous industrial fluids possess superior lubricating and wear preventing characteristics and are useful as hydraulic fluids and metalworking compositions. Fluids of the invention comprise (1) an aqueous liquid and (2) a water-soluble synthetic addition polymer of (a) an ethylenically unsaturated crosslinking monomer, (b) an ethylenically unsaturated water-soluble monomer, (c) an ethylenically unsaturated water-insoluble monomer and (d) an ethylenically unsaturated polyalkyleneoxy-containing monomer. The industrial fluids exhibit good Newtonian behavior and mechanical stability at high shear.

Growing community of inventors

Midland, MI, United States of America

Kenneth L Foster