International Business Machines Corporation

Kenneth J Travis, Jr

Mark A Takacs

Rebecca Yung Gorrell

Hormazdyar M Dalal

Jun Li Wang

Gene J Gaudenzi

Bruce Anthony Copeland

Lovell B Wiggins

Donald W Scheider

Peter O Ulanmo

A method of forming a lead-free solder alloy on an electronic substrate. In the method, a metal stack which includes a thick nickel barrier layer and an outer copper layer is then evaporated or plated with silver and tin. Upon heating to an appropriate temperature, the copper, tin and silver form a lead-free tin, silver, copper solder.

Method of forming a lead-free tin-silver-copper based solder alloy on an electronic substrate

A corrosion resistant electrode structure for interconnecting a decoupling capacitor to a substrate is disclosed. In an exemplary embodiment of the invention, the electrode structure includes a first chromium layer formed upon the capacitor and a first nickel layer formed upon the first chromium layer. A noble metal conductive layer is then formed upon the first nickel layer and a second nickel layer is formed upon said noble metal conductive layer. The second nickel layer has a thickness which is greater than a thickness of the first nickel layer. A second chromium layer is then formed upon the nickel layer.

Corrosion-resistant electrode structure for integrated circuit decoupling capacitors

A capacitor having a multilevel interconnection technology and process thereof. Also disclosed is a process of electrically connecting a capacitor to an object, comprising the steps of first obtaining a capacitor. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contacting means. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

Process of forming a capacitor with multi-level interconnection technology

This invention is directed to a capacitor having a multilevel interconnection technology. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contact. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

Growing community of inventors

Newburgh, NY, United States of America

Kenneth J Travis, Jr