Globalfoundries Singapore Pte. Ltd.

Ultratech, Inc.

Kenneth J Stein

Qizhi Liu

Judson Robert Holt

Shyue Seng Tan

Vibhor Jain

John Joseph Pekarik

Yung Fu Chong

Xinshu Cai

Kien Seen Daniel Chong

Anthony K Stamper

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises silicon based material; an intrinsic base; and an extrinsic base overlapping the emitter region and the intrinsic base; an extrinsic base overlapping the emitter region and the intrinsic base; and an inverted 'T' shaped spacer which separates the emitter region from the extrinsic base and the collector region from the emitter region.

Transistor with wrap-around extrinsic base

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.

Growing community of inventors

Sandy Hook, CT, United States of America

Kenneth J Stein