Samsung Electronics Co., Ltd.

Kenneth Hicks

Sumeer Goel

Prashant U Kenkare

Andrew Christopher Russell

Jan-Michael Huber

Rajesh Kapaluru

According to one general aspect, an apparatus may include a latch circuit configured to, depending in part upon a state of an enable signal, substantially pass the first clock signal to an output signal. The latch circuit may include at least two transistors configured to essentially perform a NAND function and controlled by a second clock signal, wherein the at least two transistors are configured to alter the timing of the substantial passing of the first clock signal to the output signal.

Integrated clock gater latch structures with adjustable output reset

According to one general aspect, an apparatus may include a power header and a logic circuit. The power header may include a gate terminal, a first channel terminal, a second channel terminal, and a bulk terminal coupled with a first voltage power signal. The power header may be configured to perform one of dynamically coupling or decoupling a logic circuit with the first voltage power signal. The logic circuit may include a bulk terminal coupled with a second voltage power signal and a power terminal that is either dynamically coupled or decoupled, as determined by the power header, with the first voltage power signal. A power sequencing signal may be included in the apparatus and may be configured to control the power header such that, when active, the power header couples the logic circuit with the first voltage power signal after the second voltage power signal is high.

System and method for providing an area efficient and design rule check (DRC) friendly power sequencer for digital circuits

Embodiments include a read column select negative boost driver of a memory device. The negative boost driver may include a negative boost element coupled to a P-type metal-oxide-semiconductor (PMOS) pass gate, and configured to negatively boost a read column select signal below a negative power supply level VSS dependent on a boost control signal. The negative boost driver may further include an N-type metal-oxide-semiconductor (NMOS) boost control transistor coupled to the negative boost element and to a read column select inverter, and configured to tri-state the read column select inverter dependent on the boost control signal.

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Austin, TX, United States of America

Kenneth Hicks