Lucent Technologies Inc.

Triquint Technology Holding Co.

Agere Systems Optoelectronics Guardian Corp.

Lucent Technology

Kenneth Gerard Glogovsky

Abdallah Ougazzaden

Charles William Lentz

Yuliya Anatolyevna Akulova

Mindaugas Fernand Dautartas

Mark S Hybertsen

Claude Lewis Reynolds, Jr

Justin Larry Peticolas

Marlin Wilbert Focht

The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Integrated optoelectronics devices

The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereof

A beam expander for providing coupling between a semiconductor optical device and an optical fiber comprises a double layer structure that may be integrated with the optical device. The first, underlying layer of the expander comprises a relatively high refractive index material (e.g., 3.34), thus providing improved coupling efficiency between the optical device and the fiber. The second, covering layer of the expander comprises a relatively low refractive index material (e.g., 3.28), for providing the large mode size desired at the fiber input. The parameters of each layer can be adjusted independently, allowing for the two criteria (coupling efficiency and mode size) to be separately optimized.

Double layer beam expander for device-to-fiber coupling

A method and apparatus for achieving alignment between a spray etcher nozzle and a semiconductor (either microelectronic or optoelectronic, for example) wafer surface. A spray nozzle tip is temporarily removed from the spray nozzle and an illumination source, such as a low power laser, is activated and inserted in its place. The laser emission illuminates the wafer surface and, by adjusting the position of the nozzle, alignment between the nozzle and wafer can be achieved. Once aligned, the nozzle is locked in place and the laser is replaced with the conventional spray nozzle tip.

Method and apparatus for aiming a spray etcher nozzle

A method for non-destructively determining the amount of undercutting in a hidden layer of material disposed on a substrate after device patterning by etching. The method involves forming at least two lines of etch resistant material of increasing width over the hidden layer of material of the substrate and inspecting the lines after etching for a given time period to determine how many lines have been removed. The width dimension of the largest removed line corresponds approximately to the amount of undercut for two sides in the hidden layer of material after etching for the given time period.

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Kempton, PA, United States of America

Kenneth Gerard Glogovsky