E.i. Dupont De Nemours and Company

Dow Corning Corporation

Other

Kenneth George Sharp

Jeffrey Scott Meth

Lynda Kaye Johnson

Feng Gao

Gary Delmar Jaycox

Marc Bruce Goldfinger

Reid John Chesterfield

Michael Joseph Michalczyk

Graciela Beatriz Blanchet

Richard Kevin Bailey

Irina Malajovich

Geoffrey Nunes

Elizabeth Forrester McCord

Gerald Donald Andrews

William J Marshall

John W Catron, Jr

John J D'Errico

Paul J Shannon

Roger Harquail French

Hong Meng

Howard David Glicksman

Rinaldo Soria Schiffino

Theresa E Gentle

Roupen Leon Keusseyan

Charles Nehemiah McEwen

Larry F Hanneman

Robert Clayton Wheland

Mark Andrew Harmer

Karyn B Visscher

Thomas M Ford

Leo Tarhay

Fredrick Claus Zumsteg, Jr

Charles Winfield Stewart

Irene Greenwald Plotzker

Thomas C Felder

Samuel Tacitus D'Arcangelis

Gerard O'Neil

Dennis George Swartzfager

John Catron

Charles Nehemiah McEwan

Seema Agrawal

John Blase Zucaro

Fredrick Claus Zumsteg Jr

The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Thermally imageable dielectric layers, thermal transfer donors and receivers

The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.

Donor elements and processes for thermal transfer of nanoparticle layers

The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Thin film transistor comprising novel conductor and dielectric compositions

Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.

Negative imaging method for providing a patterned metal layer having high conductivity

This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

Process for laminating a dielectric layer onto a semiconductor

Method for determining gas accumulation rates

A polymer composition and method for reducing the permeability of gases through molded polymeric containers and films by incorporating into the polymer from which the container or film is formed an effective amount of a barrier-enhancing additive, such as monoesters of hydroxybenzoic acid and hydroxynaphthoic acid.

Method and composition for improving gas barrier properties of polymeric containers and films

Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

Attenuating phase shift photomasks

This invention relates to a rapid process for the preparation of a silica gel or a silicate polymer comprising contacting at least one fluoroalkoxysilane with a solution comprising water, optionally in the presence of a solvent and/or a catalyst. Low density gels can be prepared using this process and can possess large pore size, greater than 50 nm.

Rapid process for making silica gel and silicate polymer and low density gels made thereby

This invention relates to a process for the preparation of an inorganic oxide gel comprising contacting at least one fluorinated inorganic oxide precursor with a fluorinated gelling agent in the presence of at least one fluorinated solvent to form a solution; allowing sufficient time for gelation to occur; and isolating the inorganic oxide gel. Gels made by this process are useful as coatings and as components in inorganic/organic hybrid materials.

Process for making inorganic oxide gels in fluorocarbon solvents

The present invention pertains to molecular and oligomeric organo-silicon compounds bearing fluorine atoms, soluble in fluorinated solvents and useful as precursors to network materials.

Molecular and oligomeric silane precursors to network materials

This invention relates to a fluoropolymer nanocomposite comprising a fluoropolymer phase and an inorganic oxide phase dispersed throughout, said inorganic oxide phase having either no particles or particles substantially all of which have a particle size of less than about 75 nm which can be determined by small angle x-ray scattering and transmission electron microscopy techniques. These nanocomposites are useful as protective coatings.

Fluoropolymer nanocomposites

Growing community of inventors

Landenberg, PA, United States of America

Kenneth George Sharp