Cree Gmbh

USA As Represented by Secretary of the Navy

Kenneth George Irvine

Michael James Paisley

Galina Kelner

Olle Claes Erik Kordina

Michael Spencer

Olle Claes Kordina

Vladamir A Dmitriev

An improved chemical vapor deposition method is disclosed that increases the uniformity of silicon carbide epitaxial layers and that is particularly useful for obtaining thicker epitaxial layers. The method comprises heating a reactor to a temperature at which silicon carbide source gases will form an epitaxial layer of silicon carbide on a substrate in the reactor; and then directing a flow of source and carrier gases through the heated reactor to form an epitaxial layer of silicon carbide on the substrate with the carrier gases comprising a blend of hydrogen and a second gas in which the second gas has a thermal conductivity that is less than the thermal conductivity of hydrogen so that the source gases deplete less as they pass through the reactor than they would if hydrogen is used as the sole carrier gas.

Highly uniform silicon carbide epitaxial layers

Growth of very uniform silicon carbide epitaxial layers

A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200.degree. C. or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.

Lower bandgap, lower resistivity, silicon carbide heteroepitaxial

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Apex, NC, United States of America

Kenneth George Irvine