Analog Devices,inc.

Analog Devices International Unlimited Company

Kenneth Flanders

James G Fiorenza

Puneet Srivastava

Daniel Piedra

Andrew Proudman

Leslie P Green

Denis Michael Murphy

Peter R Stubler

John Albert Geen

Michael Delaus

Susan L Feindt

George M Molnar

Kenneth J Cole

James Timony

Matthew Duffy

Ryan Iutzi

Gregory S Davis

Rama Krishna Kotlanka

Bruce Ma

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Aluminum-based gallium nitride integrated circuits

Gallium nitride integrated circuits including non-gold-based metallic materials

A transfer printing method is described that can be used for a wide variety of materials, such as to allow for circuits formed of different materials to be integrated together on a single integrated circuit. A tether () is formed on dice regions () of a first wafer (), followed by attachment of a second wafer () to the tethers. The dice regions () are processed so as to be separated, followed by transfer printing of the dice regions to a third wafer ().

Method of transfer printing

Thick (i.e., greater than two microns), fine-grained, low-stress tungsten MEMS structures are fabricated at low temperatures, particularly for so-called 'MEMS last' fabrication processes (e.g., when MEMS structures are fabricated after electronic circuitry is fabricated). Means for very accurately etching structural details from the deposited tungsten layer and for strongly and stably anchoring the tungsten layer to an underlying substrate are disclosed. Also, means for removing a sacrificial layer underlying the mobile tungsten layer without damaging the tungsten or allowing it to be drawn down and stuck by surface tension is disclosed.

Fabrication of tungsten MEMS structures

Growing community of inventors

Reading, MA, United States of America

Kenneth Flanders