International Business Machines Corporation

Globalfoundries Inc.

Kenneth F McAvey, Jr

Anthony K Stamper

Jeffrey P Gambino

William Alfred Syverson

Charles F Musante

Casey Jon Grant

Joel M Sharrow

Alison K Easton

Nicole Susan Carpenter

Kenneth H Yao

Joseph R Drennan

Andrew S Hoadley

Timothy Dooling Sullivan

Thomas L McDevitt

Bruce Walter Porth

Jay Sanford Burnham

Arthur C Winslow

George A Dunbar, Iii

William R Hill

Damyon L Corbin

John C Hall

Robert Zwonik

Mark A Pakulski

Francis A Abramovich

Rick H Gaylord

The embodiments of the present invention relate to semiconductor device manufacturing, and more particularly, a method of temporarily bonding a semiconductor wafer to a wafer carrier with a multi-layered contact layer as well as a structure. A method is disclosed that includes: forming a first layer on a surface of a semiconductor wafer; forming a second layer on the first layer; bonding a perforated carrier to the second layer; and removing the semiconductor wafer from the perforated carrier. The first layer may be composed of an adhesive. The second layer may be composed of a material having a higher outgassing temperature than the first layer.

Dual adhesive bonding with perforated wafer

A handle wafer which prevents edge cracking during a thinning process and method of using the handle wafer for grinding processes are disclosed. The handle wafer includes a body portion with a bottom surface. A square edge portion is provided about a circumference of the bottom surface.

Handle wafer

A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Backside metal ground plane with improved metal adhesion and design structures

An apparatus and method are provided for removing contaminate particulate matter from substrate surfaces such as semiconductor wafers. The method and apparatus use a material, preferably a liquid curable polymer, which is applied as a sacrificial coating to the surface of a substrate containing contaminate particulate matter thereon. An energy source is used to dislodge the contaminate particulate matter from the surface of the wafer into the sacrificial coating so that the particles are partially or fully encapsulated and suspended in the sacrificial coating. The sacrificial coating is then removed. The coating is preferably formed into a film to facilitate removal of the coating by pulling (stripping) the film providing a cleaner substrate surface.

Cleaning of semiconductor wafers by contaminate encapsulation

An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.

Method of fabricating copper damascene and dual damascene interconnect wiring

A method for preparing a workpiece surface utilizing two more fluids of differing density and miscibility which create one or more fluid interfaces wherein the fluids are chosen such that the solubility or affinity of one of the fluids is high for a material to be removed from the workpiece surface while the other fluid has a low solubility or affinity for the material to be removed. The workpiece surface is treated by passing the workpiece through the fluid interface. The two or more fluids are preferably dispensed into an apparatus and allowed to settle into two or more predominant layers separated by an interface. Surface preparation techniques which may benefit from the present invention include etching, cleaning or drying processes and the like.

Method for surface preparation of workpieces utilizing fluid separation techniques

Growing community of inventors

Winooski, VT, United States of America

Kenneth F McAvey, Jr