International Business Machines Corporation

Kenneth Edward Beilstein, Jr

John Edward Cronin

Claude Louis Bertin

Francis Roger White

A three-dimensional five transistor SRAM trench structure and fabrication method therefor are set forth. The SRAM trench structure includes four field-effect transistors (&ldquo;FETs&rdquo;) buried within a single trench. Specifically, two FETs are located at each of two sidewalls of the trench with one FET being disposed above the other FET at each sidewall. Coaxial wiring electrically cross-couples the FETs within the trench such that a pair of cross-coupled inverters comprising the storage flip-flop for the SRAM cell is formed, A fifth, I/O transistor is disposed at the top of the trench structure, and facilitates access to the flip-flop. Specific details of the SRAM trench structure, and fabrication methods therefor are also set forth.

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Essex Junction, VT, United States of America

Kenneth Edward Beilstein, Jr