The University of North Carolina at Charlotte

Other

Kenneth E Gonsalves

Mingxing Wang

Wei He

Mohammed Azam Ali

The present invention provides photoacid generators for use in chemically amplified resists and lithographic processes using the same.

Photoacid generators and lithographic resists comprising the same

This invention relates to biomaterials, biocompatible photoresists, and electroactive photoresists, and methods to engineer the interactions between biomaterials and cells. In one aspect, this invention provides for modifying surface topography through micro-patterning techniques that require no organic solvent development to reveal the lithographic patterns. Cells can be cultured on these surfaces directly and exhibit strong cell alignment features.

Biocompatible resists

The present invention relates to photoacid generating compounds, lithographic resists comprising photoacid generating compounds, and to various lithographic processes techniques, and applications. In one embodiment, the present invention provides a photoacid generator of Formula (I): 

The present invention addresses many of the current limitations in sub-100 nm lithographic techniques by providing novel resists that achieve high sensitivity, high contrast, high resolution, and high dry-etch resistance for pattern transfer to a substrate. In one embodiment, the present invention provides a polymeric resist comprising an adamantyl component and a photoacid generating component.

High resolution resists for next generation lithographies

The present invention provides new high resolution nanocomposite resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite negative resists comprising a photoacid generating component, a styrene component, and an optional polyhedral oligosilsequioxane component are provided. Negative resists of this invention may also contain an optional methacrylate component. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Nanocomposite negative resists for next generation lithographies

The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

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Concord, NC, United States of America

Kenneth E Gonsalves