Intel Corporation

Kenneth C Cadien

A Daniel Feller

Anne E Miller

Daniel A Feller

Paul B Fischer

Shriram Ramanathan

Chang-Min Park

Patrick R Morrow

Leopoldo D Yau

Allen Daniel Feller

Robert S Chau

Valery M Dubin

David B Fraser

Tatyana N Andreyushchenko

Gopal Raghavan

Chris E Barns

Matthew J Prince

Donald D Danielson

Mark F Buehler

Michael A Maxim

Ning Hsieh

Michael Kocsis

Srinivasam Sivaram

An embodiment of the invention relates to a portable or handheld device for performing NMR analysis. The device comprises a console and a strip which can be placed into the console through a slot or other means. The strip comprises a sample holding place and a microcoil for generating an excitation magnetic field across a sample in the sample holding space. A permanent magnet is provided either by the console or the strip and generates a static magnetic field which, together with the excitation magnetic field, creates NMR within the sample. Other embodiments of the invention also encompass method of performing NMR analysis using the portable device and method of making such devices.

Portable NMR device and method for making and using the same

Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.

Introducing nanotubes in trenches and structures formed thereby

A method includes forming a barrier layer on a substrate surface including at least one contact opening; forming an interconnect in the contact opening; and reducing the electrical conductivity of the barrier layer. A method including forming a barrier layer on a substrate surface including a dielectric layer and a contact opening, depositing a conductive material in the contact opening, removing the conductive material sufficient to expose the barrier layer on the substrate surface, and reducing the electrical conductivity of the barrier layer. An apparatus including a circuit substrate including at least one active layer including at least one contact point, a dielectric layer on the at least one active layer, a barrier layer on a surface of the dielectric layer, a portion of the barrier layer having been transformed from a first electrical conductivity to a second different and reduced electrical conductivity, and an interconnect coupled to the at least one contact point.

Method to fabricate interconnect structures

An embodiment of the invention relates to a portable or handheld device for performing NMR analysis. The device comprises a console and a strip which can be placed into the console through a slot or other means. The strip comprises a sample holding place and a microcoil for generating an excitation magnetic field across a sample in the sample holding space. A permanent magnet is provided either by the console or the strip and generates a static magnetic field which, together with the excitation field, creates NMR within the sample. Other embodiments of the invention also encompass method of performing NMR analysis using the portable device and method of making such devices.

An embodiment of the invention relates to a device for performing NMR or ESR analysis. The device comprises a detection unit, a magnet, and a disk having a magnetic pattern. The detection unit comprises a sample holding space for holding a sample and a microcoil for detecting NMR or ESR signals generated within the sample. The magnet generates a static magnetic field within the sample. The disk and magnetic pattern, when rotating, generate an excitation magnetic field, which, together with the static magnetic field, creates an NMR or ESR within the sample. Other embodiments of the invention encompass methods for performing NMR or ESR analysis using the device and methods of making such devices.

Device and method using magnetic pattern on disk

An embodiment if the invention relates to an integrated on-chip NMR or ESR device for performing chemical analysis and medical diagnostics. Specifically, the device contains, on a single substrate, a sample holding space, a magnet for generating a static magnetic field across the sample holding space and a microcoil for generating an excitation magnetic field across sample holding space. The magnetic fields are able to create NMR or ESR within a sample in the sample holding space and collect and/or process the signals from the NMR or ESR. The substrate may comprise an array of microcoils and sample holding spaces for performing multiple NMR or ESR analysis, such as multiple DNA analysis. Other embodiments of the invention relate methods for fabricating such devices and methods for performing NMR or ESR analysis using such devices.

Integrated on-chip NMR and ESR device and method for making and using the same

A method for buffering a chemical mechanical polish chemical slurry is disclosed. Buffering the slurry reduces buildup of local acidic areas at the interface between the polished metal and the polishing pad. Reduction of the local acidic areas improves the uniformity of the polish and an endpoint signal used to determine when to finish the polish operation.

Method of improving chemical mechanical polish endpoint signals by use of chemical additives

A slurry for use in polishing a first material having a first hardness, wherein the first material overlies a second material having a second hardness, and the second hardness is greater than the first hardness, includes an abrasive that has a hardness which is greater than that of the first material but less than that of the second material. In a particular embodiment of the present invention copper overlying a copper diffusion barrier is polished with a slurry having an abrasive which is harder than copper but less hard than the copper diffusion barrier. Iron oxide, strontium titanate, apatite, dioptase, iron, brass, fluorite, hydrated iron oxide, and azurite, are examples of materials that are harder than copper but less hard than materials typically used as copper diffusion barriers in integrated circuits.

Abrasives for chemical mechanical polishing

A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siOabrasive, a (NH)SOoxidizer, a benzotriazole corrosion inhibitor, and a KPO/KHPObuffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have SOor Fe(CN)as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

High pH slurry for chemical mechanical polishing of copper

A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO abrasive, a (NH ) S O oxidizer, a benzotriazole corrosion inhibitor, and a K PO /K HPO buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S O or Fe(CN) as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

High PH slurry for chemical mechanical polishing of copper

The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. The abrasive is also included in the liquid. The liquid, the cerium ions and the abrasive jointly have a first pH value. The pH increasing substance increases the first pH value to a second pH value above 1.5.

Ceric-ion slurry for use in chemical-mechanical polishing

A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish slurries, in accordance with the present invention, may be formed by further combining an oxidizer, such as hydrogen peroxide, and/or a corrosion inhibitor such as benzotriazole. Advantageous properties of slurries in accordance with the present invention include the enhancement of Cu removal rates to >3000 angstroms per minute. This high polish rate is achieved while maintaining local pH stability and substantially reducing global and local corrosion as compared to prior art copper polish slurries. Local pH stability provides for reduced within-wafer non-uniformity and reduced corrosion defects. Furthermore, copper diffusion barriers such as tantalum or tantalum nitride may also be polished with such slurries wherein the oxidizer is not included.

Slurry and method for chemical mechanical polishing of copper

Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is performed prior to the CMP of the copper. In alternative embodiments, a rinse operation is performed subsequent to the cleaning operation and prior to the CMP. In further alternatives, a post-polish cleaning operation with a chelating agent is performed. In still further alternatives, the pH of a pre-polish cleaner is ramped during the pre-polish cleaning operation to match the pH of the polish slurry which is used, subsequent to the cleaning operation, to remove excess portions of the copper layer to be polished.

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Portland, OR, United States of America

Kenneth C Cadien