Raytheon Company

Kenneth Allen Gerber

Robert P Ginn

Jonathan Getty

Andreas Hampp

Scott S Miller

Aaron M Ramirez

Alexander C Childs

A method for bonding a first semiconductor body having a plurality of electromagnetic radiation detectors to a second semiconductor body having read out integrated circuits for the detectors. The method includes: aligning electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits; tacking the aligned electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits to form an intermediate stage structure; packaging the intermediate stage structure into a vacuum sealed electrostatic shielding container having flexible walls; inserting the package with the intermediate stage structure therein into an isostatic pressure chamber; and applying the isostatic pressure to the intermediate stage structure through walls of the container. The container includes a stand-off to space walls of the container from edges of the first semiconductor body.

Focal plane array packaging using isostatic pressure processing

A method includes bonding a first side of a metal shim to a silicon shim, removing metal from the metal shim to form a plurality of cleared metal lanes in accordance with a pattern, bonding a readout integrated circuit having a plurality of saw lanes in accordance with the pattern to a second side of the metal shim to form a wafer assembly wherein the plurality of saw lanes is aligned with the plurality of cleared metal lanes, and dicing the wafer assembly.

Method of construction of CTE matching structure with wafer processing and resulting structure

InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.

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Santa Maria, CA, United States of America

Kenneth Allen Gerber