US Government As Represented by the Secretary of the Army

Kenneth A Jones

Madan Dubey

Lawrence C West

Weiyu Han

Vladimir Sinisa Ban

Joseph R Flemish

Michael Andrew Derenge

Carl Emmett Hager, Iv

Alok Tripathi

Howard S Lee

A method of preventing the escape of nitrogen during the activation of ion implanted dopants in a Group III-nitride semiconductor compound without damaging the Group III-nitride semiconductor comprising: depositing a first layer of another Group III-nitride that acts as an adhesion layer; depositing a second layer of a Group III-nitride that acts as a mechanical supporting layer; said first and second layers forming an annealing cap to prevent the escape of the nitrogen component of the Group III-nitride semiconductor; annealing the Group III-nitride semiconductor at a temperature in the range of approximately 1100-1250&#xb0; C.; and removing the first and second layers from the Group III-nitride semiconductor.

Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby

An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide.

Techniques for forming optical electronic integrated circuits having interconnects in the form of semiconductor waveguides

An optical electronic integrated (circuit (OEIC) having optical waveguides s device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

Techniques for forming optical electronic integrated circuits having

An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a to plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal germanium layer is epitaxially deposited on the superlattice substrate. A layer of gold is deposited on the germanium layer. The gold and germanium layers are imagewise patterned and selected portions etched away. The patterned substrate is encapsulated in a compatible, heat resistant encapsulating material. The encapsulated substrate is then annealed at a temperature of up to about 350.degree. C.

Method of making a selective compositional disordering of a GaAs based

An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.

Method of growing device quality InP onto an InP substrate using an

A conventional hydride VPE reactor is modified by the addition of a gas switching manifold and the use of three way pneumatic valves in the manifold to alternately direct the flow of reactant gas mixtures into either the reactor or a vent line. With these additions, various predetermined gas mixtures of arsine, phosphine, and hydrogen selected by electronic mass flow controllers (GM1 and GM2) and predetermined gas mixtures of H.sub.2 and HCl (GM3) may be alternately infused into the reactor chamber or vented as desired. When GM3 is injected into the reactor chamber, the content of GaAs of the growing layer increases while the content of In decreases. Given this, when GM3 and GM2 are vented rather than injected into the furnace and GM1 is directed into the furnace, a layer of InGaAsP with a predetermined composition (A) will be deposited. Alternatively, when GM3 and GM2 are co-injected into the reactor and GM1 is be directed to the vent, a layer of InGaAsP of a predetermined composition (B) will be deposited. Therefore, the flow rates of HCl, PH.sub.3 and AsH.sub.3 can be adjusted to produce compositions A and B that correspond to a lattice-matched condition with either InP or GaAs substrate.

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Brick, NJ, United States of America

Kenneth A Jones