Intevac, Inc.

Leland Stanford Junior University

Eotech, Inc.

Varian Associates, Inc.

Interac, Inc.

Kenneth A Costello

Verle W Aebi

Kevin James Roderick

Edward Yin

Kevin P Fairbairn

David W Brown

Yun Chung

Patricia Gober

Ross A LaRue

Aaron W Baum

Verle Aebi

Xi Zeng

R Fabian Pease

William E Spicer

Robert E Weiss

Stephen J Bartz

Douglas Fowler

Mark A McCord

Hugh F MacMillan

James E Schneider

Michael Jurkovic

Michael Wayne Pelczynski

Kevin P c/o Intevac Inc Fairbairn

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

Compact proximity focused image sensor

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

Thermally assisted negative electron affinity photocathode

An image intensifier and a method of fabrication are disclosed. The image intensifier contains a photocathode assembly () including a vacuum window to generate photoelectrons in response to light, a vacuum package () and an anode assembly () to receive the photoelectrons. The anode assembly is mounted to the vacuum package via a compliant, springy, support structure (). The anode additionally includes one or more insulating spacers () on the surface facing the photocathode so as to precisely index the position of the anode assembly with respect to the photocathode surface. The photocathode and vacuum window assembly is pressed into the vacuum package to generate a sealed leak tight vacuum envelope. During the photocathode assembly to vacuum package assembly pressing operation, the inner surface of the photocathode assembly contacts the insulating spacer/spacers of the anode assembly, thereby compressing the compliant support structure. This structure and assembly method result in a precisely indexed photocathode to anode assembly sealed image intensifier.

Image intensifier with indexed compliant anode assembly

A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, AlO, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, AlO, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.

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An image sensor is disclosed that includes a solid state semiconductor imager having a metallized catch pad, a collimator having a metallized layer that faces a sensor anode, the metallized layer joined with the metallized catch pad to form a metal bond between the solid state semiconductor imager and the collimator. Methods of making the joined solid state semiconductor imager and collimator assembly are also disclosed.

Collimator bonding structure and method

There is described-novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

Semiconductor die attachment for high vacuum tubes

Bonding and interconnect techniques including a spacer for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the tube resulting therefrom.

A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in a variety of instruments and night vision devices.

Photocathode structure and operation

Backthinning in an area selective manner is applied to CMOS imaging sensorsfor use in electron bombarded active pixel array devices. A further arrangement results in an array of collimatorsaligned with pixelsor groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layeron the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layeroptimizes electron collection at the pixel array.

Backside imaging through a doped layer

A housing for microelectronic devices requiring an internal vacuum for operation, e.g., an image detector, is formed by tape casting and incorporates leads between interior and exterior of said housing where said leads are disposed on a facing surface of green tape layers. Adjacent green tape layers having corresponding apertures therein are stacked on a first closure member to form a resulting cavity and increased electrical isolation or channel sub-structures are achievable by forming adjacent layers with aperture dimension which vary non-monotonically. After assembly of the device within the cavity, a second closure member is sealed against an open face of the package in a vacuum environment to produce a vacuum sealed device.

Unitary vacuum tube incorporating high voltage isolation

Backthinning in an area selective manner is applied to imaging sensorsfor use in electron bombarded devices. A further arrangement results in an array of collimatorsaligned with pixelsor groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layeron the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layeroptimizes electron collection at the pixel array.

Backside thinning of image array devices

There is described novel bonding and interconnecting techniques for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

This invention deals with the reduction in fixed pattern noise in backthinned CMOS imagers primarily for use in a vacuum environment. Reduction is achieved by effectively shielding the imager. This is done by depositing a conductive layer on the front surface prior to the attachment of a support member or by incorporating a conductive layer into the die at least extensive with the analog circuitry. This also may be achieved by leaving a void adjacent to the analog circuitry area. This void, filled with air or a vacuum specifies a low dielectric layer over critical analog circuitry. Finally there is extended across the die an adhesive or underfill material after which a support member is placed onto the underfill to provide structure to the die. The underfill and the support layer should have thermal coefficients of expansion that substantially match that of the silicon.

Growing community of inventors

Alameda County, CA, United States of America

Kenneth A Costello