Lam Research Corporation

Kennet Baylon

Armen Avoyan

Hong Shih

John Edward Daugherty

Duane Outka

Cliff La Croix

Amir A Yasseri

Cliff LaCroix

Girish M Hundi

An apparatus for measuring contaminants on a surface of a component is provided. An extraction vessel for holding a measurement fluid has an opening adapted to form a meniscus using the measurement fluid. An actuator moves at least one of the extraction vessel and the component to a position where the meniscus is in contact with the surface of the component. A transducer is positioned to provide acoustic energy to the measurement fluid.

Chamber component cleanliness measurement system

A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.

Electrostatic chuck cleaning fixture

A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.

Wet clean process for cleaning plasma processing chamber components

Growing community of inventors

Santa Clara, CA, United States of America

Kennet Baylon