Tokyo Electron Limited

Kennan Mo

Kouichi Sekido

Atsushi Matsumoto

Kensaku Narushima

Takanobu Hotta

Eiichi Komori

Katsumasa Yamaguchi

Nagayasu Hiramatsu

Nuri Choi

A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.

Flow rate control method, flow rate control device, and film forming apparatus

A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.

Method of processing substrate

Growing community of inventors

Nirasaki, Japan

Kennan Mo