Nec Corporation

Kenko Tagushi

Toshitaka Torikai

Yoshimasa Sugimoto

An avalanche photodiode having a semiconducting light absorbing layer and an overlying avalanche gain layer of wide band-gap. The usual heavily doped region is formed in the avalanche gain region to form an abrupt p-n junction. Two semiconducting guard rings are formed around the heavily doped region. The doping of both rings provide graded p-n junctions with the avalanche gain layer. The inner guard ring extends more deeply into the avalanche gain layer than either the outer ring or the heavily doped region.

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Tokyo, Japan

Kenko Tagushi