Nippon Hoso' Kyokai

Hitachi, Ltd.

Shimadzu Corporation

Other

Hitachi, Ltd. & Nippon Hoso Kyokai

Kenkichi Tanioka

Keiichi Shidara

Tadaaki Hirai

Yukio Takasaki

Tatsuo Makishima

Yasuhiko Nonaka

Kazutaka Tsuji

Kenji Sameshima

Tatsuro Kawamura

Junichi Yamazaki

Eisuke Inoue

Takashi Yamashita

Sachio Ishioka

Naohiro Goto

Kazuhisa Taketoshi

Hirofumi Ogawa

Tsuyoshi Uda

Masaaki Aiba

Shirou Suzuki

Eikyuu Hiruma

Eikyu Hiruma

Mitsuo Kosugi

Hirokazu Matsubara

Shiro Suzuki

Shiro Oikawa

Masanao Yamamoto

Chushirou Kusano

Takayuki Takemoto

Takaaki Unnai

Misao Kubota

Toshio Yamagishi

Tutomu Katou

Yochizumi Ikeda

Yasushi Nakano

Yoshiyuki Kaneko

Hiromichi Tonami

Yasuharu Shimomoto

Kazuyuki Nagatsuma

Tetsuya Ohshima

Norifumi Egami

Shigeru Ehata

Yutaro Kimura

Fumihiko Ando

Hidetoshi Kishimoto

Mitsuhiro Kurashige

Takao Kuriyama

Eikiyu Hiruma

Masakazu Nanba

Yoshizumi Ikeda

Takahisa Nishikawa

Keiichi Hiragaki

Tatsuya Shimizu

Yohitsumu Ikeda

Teruo Uchida

An X-ray image pickup tube converts a transmitted X-ray image into electric signals. The pickup tube includes a target structure having a fluorescent element, and a translucent conductive film for receiving a high voltage, with a photoconductive film laminated thereupon. The fluorescent element receives transmitted X rays in a two-dimensional distribution, and converts them into visible rays in a two-dimensional distribution. The translucnet conductive film is optically coupled to a surface of the fluorescent element opposite from an X-ray incident surface thereof. The photoconductive film includes an amorphors semiconductor layer which converts the visible rays transmitted in a two-dimensional distribution through the translucent conductive film, into electric charges in a two-dimensional distribution, and which multiplies the electric charges in the two-dimensional distribution based on electric fields formed by the high voltage applied to the translucent conductive film. The pickup tube also has a signal reading device in the form of an electron gun or switching elements for scanning a surface of the photoconductive film, as electric signals, a two-dimensional electric potential distribution occurring on the photoconductive film.

X-ray image pickup tube

A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

Imaging apparatus and operation method of the same

A two-dimensional radiation detector for obtaining a radiographic image as converted into electric signals. The detector has a multi-layer structure including a scintilator, a translucent electrode film, a photoconductive film and a scan switch layer. The scan switch layer includes conductors arranged in matrix form and in contact with the photoconductive film, a plurality of FETs corresponding to the conductors arranged in matrix form, and a uniformly planar conductor for successively applying a bias voltage through the FETs to the matrix conductors row by row. Each FET has a drain electrode connected to one of the matrix conductors, a source electrode connected to the uniformly planar conductor, and a gate electrode connected to the drive circuit. The translucent electrode film includes column conductors corresponding to columns of the matrix conductors, each of the column conductors being connected to a signal reading line.

Two-dimensional radiation detector

An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

Image pickup tube utilizing third electrode and its operating method

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Photoconductive imaging apparatus

An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Image pick-up tube and apparatus having the same

Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Amorphous photoelectric conversion device with avalanche

An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Method of fabricating an image pick-up tube and target section used

A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Electric conversion device

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Photoconductive device and method of operating the same

A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Target of image pickup tube having an amorphous semiconductor laminate

A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Target of image pickup tube

A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

Doped photoconductive film including selenium and tellurium

A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.

Image pick-up tube target

Growing community of inventors

Tokyo, Japan

Kenkichi Tanioka