Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Kenju Nishikido

Kenta Nojima

Ikuo Yoshihara

Hideki Hirano

Keishi Inoue

Akiko Ogino

Kazunori Nagahata

Haruhiko Ajisawa

Iwao Sugiura

Yoichi Ootsuka

Kazuyoshi Yamashita

Atsushi Masagaki

Shinichiro Noudo

Shinobu Asayama

Takekazu Shinohara

Susumu Ooki

Haruyuki Nakagawa

Kyohei Mizuta

Tomomi Ito

Ippei Yoshiba

Shinya Itoh

Takuji Matsumoto

Suguru Moriyama

Misato Kondo

Kazuto Kamimura

Osamu Oka

There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Image sensor

The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.

Solid-state image pickup element and electronic apparatus

The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield. A solid-state imaging device including: a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array; and a stacked body formed by stacking a plurality of layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices; a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface; and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has a plurality of structures at a height generally equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

Solid-state imaging device, imaging apparatus, and method of manufacturing solid-state imaging device

There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.

Variations in photoelectric conversion performance between pixels (valid pixels and light-shielding pixels) in an imaging element are reduced. A solid-state imaging element includes: a plurality of pixels including a color filter for transmitting a light having a predetermined wavelength among incident lights, a photoelectric conversion portion formed on a semiconductor substrate and for performing photoelectric conversion in accordance with a light transmitted through the color filter, and an insulating layer placed between the color filter and the semiconductor substrate; light-shielding pixels among the plurality of pixels, including a first light-shielding portion disposed in a vicinity of the color filter on the insulating layer and for shielding the light transmitted through the color filter in its own pixel; and a second light-shielding portion disposed on the insulating layer between the plurality of pixels and the light-shielding pixels, and for shielding a light transmitted through the color filter of the adjacent pixel.

Solid-state imaging element and imaging apparatus

The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.

Solid-state imaging element, manufacturing method, and electronic apparatus

A solid-state imaging device including a semiconductor substrate on which a plurality of photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array and a stacked body formed by stacking a plurality of layers on the semiconductor substrate. The stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices. The solid-state imaging device further includes a planarization layer that is stacked on the in-layer lens layer and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices. The in-layer lens layer has a plurality of structures at a height equal to a height of the in-layer lenses, the plurality of structures being provided on an outside of the imaging device region.

The present technology relates to a lens array and a manufacturing method therefor, a solid-state imaging apparatus, and an electronic apparatus that can improve the AF performance while suppressing the deterioration of image quality. A lens array includes microlenses that are formed corresponding to phase difference detection pixels that are provided to be mixed in imaging pixels. Each of the microlenses is formed such that a lens surface thereof is a substantially spherical surface, the microlens has a rectangular shape in a planar view and four corners are not substantially rounded, and a bottom surface in vicinity of an opposite-side boundary portion that includes an opposite-side center portion of a pixel boundary portion in a cross-sectional view is higher than a bottom surface in vicinity of a diagonal boundary portion that includes a diagonal boundary portion. The present technology is applicable to a lens array of a CMOS image sensor, for example.

Lens array and manufacturing method therefor, solid-state imaging apparatus, and electronic apparatus

A solid-state imaging device includes: a photodiode formed to be segmented with respect to each pixel in a pixel area in which plural pixels are integrated on a light receiving surface of a semiconductor substrate; an insulator film formed on the semiconductor substrate to cover the photodiode; a recessed part formed with respect to each of the pixels in the insulator film in an upper part of the photodiode; a first light transmission layer of a siloxane resin formed to fill the recessed part and configure an optical waveguide in the pixel area; a second light transmission layer formed to configure an on-chip lens with respect to each of the pixels in the pixel area; and a guard ring formed to surround an outer circumference of the pixel area to partition an inner area containing the pixel area and an outer dicing area.

Solid-state imaging device

An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.

Solid-state imaging device and electronic apparatus

Semiconductor imaging device having ligth transmission layers formed relative to a guard ring structure in a predetermined manner

A solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the pixel region, a multilayer wiring layer formed on a surface of the side opposite to a light incident side of the semiconductor substrate, a supporting substrate bonded to a surface of the multilayer wiring layer side, and an antireflection structure that is formed on the bonding surface side of the supporting substrate.

Growing community of inventors

Kumamoto, Japan

Kenju Nishikido