Stanley Electric Co., Ltd

Meijo University

Kenjo Matsui

Isamu Akasaki

Tetsuya Takeuchi

Motoaki Iwaya

Takanobu Akagi

Sho Iwayama

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Growing community of inventors

Nagoya, Japan

Kenjo Matsui