Kabushiki Kaisha Toshiba

Kenjiro Uesugi

Shinya Nunoue

Jumpei Tajima

Toshiki Hikosaka

Masahiko Kuraguchi

Shigeya Kimura

Hiroshi Ono

Toshihide Ito

Daimotsu Kato

Hisashi Yoshida

Aya Shindome

Miki Yumoto

In one embodiment, a semiconductor device is provided with a substrate, a first nitride semiconductor layer above the substrate, a second nitride semiconductor layer which is provided on the first nitride semiconductor layer and is in contact with the first nitride semiconductor layer, a source electrode provided between the substrate and the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a drain electrode provided on the second nitride semiconductor layer and electrically connected to the second nitride semiconductor layer, a gate insulating layer provided at least between the substrate and the first nitride semiconductor layer, a gate electrode between the substrate and the gate insulating layer, and a first insulating layer between the substrate and the gate insulating layer to cover the gate electrode and the source electrode.

Semiconductor device and method of manufacturing semiconductor device

According to one embodiment, a semiconductor device includes first, second and third electrodes, first, second, third, and fourth semiconductor regions, and an insulating portion. The first electrode includes first and second electrode portions. The first semiconductor region includes first, second, and third semiconductor portions. The first semiconductor portion is provided between the first electrode portion and the second electrode. The second semiconductor portion is provided between the second electrode portion and the third electrode. The third semiconductor portion is provided between the first and second semiconductor portions. The second semiconductor region is provided between the first semiconductor portion and the second electrode. The third semiconductor region is positioned between the second semiconductor region and the third electrode. The insulating portion includes first and second insulating regions. At least a portion of the fourth semiconductor region is provided between the second semiconductor region and the second electrode.

Semiconductor device and method for manufacturing the same

In one embodiment, a nitride semiconductor device is provided with a first semiconductor layer that is a layer of AlGaN (0&#x3c;x1&#x2264;1), a second semiconductor layer that is on the first semiconductor layer and is a layer of a nitride semiconductor InAlGaN (0&#x3c;x2&#x3c;1, 0&#x3c;y2&#x3c;1, 0&#x3c;x2+y2&#x2264;1) containing indium, a third semiconductor layer that is on the second semiconductor layer and is a layer of AlGaN (0&#x2264;x3&#x3c;1), and a fourth semiconductor layer that is on the third semiconductor layer and is an layer of InAlGaN (0&#x3c;x4&#x3c;1, 0&#x2264;y4&#x3c;1, 0&#x3c;x4+y4&#x2264;1).

Nitride semiconductor device

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of AlGaN (0&#x3c;x&#x3c;1) or p-type AlGaN (0&#x2264;z&#x3c;1) and has a first surface, a second surface, and a third surface. The second layer includes AlGaN (0&#x2264;x&#x3c;1 and x&#x3c;x) and includes a first partial region, a second partial region, and a third partial region. The third layer includes AlGaN (0&#x3c;x&#x3c;1 and x&#x3c;x) and includes a fourth partial region, a fifth partial region, and a sixth partial region.

According to one embodiment, a semiconductor device includes first, second, and third electrodes, and first, second, third, fourth, and fifth semiconductor regions. The first electrode includes a first conductive region. The second electrode includes a second conductive region separated. The third electrode includes a third conductive region. The first semiconductor region is separated from the first, second, and third conductive regions. The second semiconductor region is provided between the first conductive and semiconductor regions, between the second conductive and first semiconductor regions, and between the third conductive and first semiconductor regions. The third semiconductor region is provided between the first conductive region and the second semiconductor region. The fourth semiconductor region is provided between the second conductive region and the second semiconductor region. The fifth semiconductor region is provided between the third conductive region and the second semiconductor region and between the third and fourth semiconductor regions.

According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a trench and exposing a portion of a first film at a bottom portion of the trench by removing a portion of a second film by performing dry etching using a gas including a first element. The second film is provided on the first film. The first film includes AlGaN (0&#x2264;x1&#x3c;1). The second film includes AlGaN (0&#x3c;x2&#x3c;1 and x1&#x3c;x2). The method can include performing heat treatment while causing the portion being exposed of the first film to contact an atmosphere including NH, forming an insulating film on the portion of the first film after the heat treatment, and forming an electrode on the insulating film.

Method for manufacturing semiconductor device

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of AlGaN (0&#x3c;x1&#x3c;1) or p-type AlGaN (0&#x2264;z1&#x3c;1) and has a first surface, a second surface, and a third surface. The second layer includes AlGaN (0&#x2264;x2&#x3c;1 and x2&#x3c;x1) and includes a first partial region, a second partial region, and a third partial region. The third layer includes AlGaN (0&#x3c;x3&#x3c;1 and x2&#x3c;x3) and includes a fourth partial region, a fifth partial region, and a sixth partial region.

According to one embodiment, a semiconductor substrate includes a first semiconductor layer including AlGaN (0&#x3c;x1&#x2264;1) and including carbon and oxygen, and a second semiconductor layer including AlGaN (0&#x3c;x2&#x3c;x1) and including carbon and oxygen. A second ratio of a carbon concentration of the second semiconductor layer to an oxygen concentration of the second semiconductor layer is 730 or more.

Semiconductor substrate and semiconductor device

According to one embodiment, a semiconductor light emitting element () includes a metal layer (), a first to a fourth semiconductor layers (), a first and a second light emitting layers (), a first to a sixth electrodes (e-e), and a first inter-element interconnect section (). The first semiconductor layer () includes a first to a third regions (r-r). The second semiconductor layer () is provided between the first region (r) and the metal layer () and between the second region (r) and the metal layer (). The third semiconductor layer () includes a fourth to a sixth regions (r-r). The fourth semiconductor layer () is provided between the fourth region (r) and the metal layer () and between the fifth region (r) and the metal layer (). The first inter-element interconnect section () is provided between the second electrode (e) and the metal layer () and between the sixth electrode (e) and the metal layer ().

Semiconductor light emitting element

A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.

A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.

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Kawasaki, Japan

Kenjiro Uesugi