Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Kenjiro Ogata

Bainian Qian

George C Jacob

Marty W DeGroot

Rui Xie

Thomas P Willumstad

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160&#xb0; C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80&#xb0; C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm.

High removal rate chemical mechanical polishing pads and methods of making

Growing community of inventors

Osaka, Japan

Kenjiro Ogata