Fujitsu Corporation

Kenjiro Hayashi

Shintaro Sato

Daiyu Kondo

Hironori Nishino

Naoki Harada

Junichi Yamaguchi

An optical sensor includes a graphene layer, a first electrode and a second electrode that are connected to the graphene layer, and an enhancement layer. The enhancement layer is disposed below the graphene layer to enhance the intensity of an optical electric field by surface plasmon resonance. The first electrode and the second electrode are arranged parallel to a first direction. The intensity of the optical electric field enhanced by the enhancement layer is greater on a first electrode side than on a second electrode side with respect to a centerline in the first direction of the graphene layer.

Optical sensor and method for manufacturing same

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.

Photo detection element, optical sensor, and method of manufacturing photo detection element

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.

Gas sensor and method of using the same

A catalyst film () is formed over a substrate (). A graphene () is grown on the catalyst film (). A gap through which a lower surface of the catalyst film () is exposed is formed. The catalyst film () is removed through the gap.

Growing community of inventors

Hadano, Japan

Kenjiro Hayashi