Yamagata University

Ube Industries, Inc.

Dis Corporation

Future Ink Corporation

Kenjiro Fukuda

Shizuo Tokito

Daisuke Kumaki

Hidetaka Shima

Toshikazu Machida

Takashi Honma

Yoshinori Katayama

Yasuhiro Tanaka

Harunori Fujita

Tomoko Okamoto

Yasuhiro Yoneda

Kazuaki Kakita

Youji Omata

Tomohito Sekine

Kenichi Yatsugi

Masashi Mamada

Natsuko Yamada

Provided is a method of manufacturing a thin film transistor satisfying the relation of L&#x3c;5 &#x3bc;m. The method includes a process of forming a streak portion by performing transfer printing on a support using a release member which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A&#x2265;0.05.

Method of manufacturing a specifically dimensioned thin film transistor, thin film transistor, and transistor array

A benzobis(thiadiazole) derivative represented by the following general formula (1):  in which R represents a linear or branched alkyl group;

Benzobis (thiadiazole) derivative, ink comprising same, and organic electronic device comprising same

The metal thin film production method of the present invention includes, in the following order, the steps of: preparing a substrate () having thereon an underlayer () formed of an insulating resin; subjecting a surface of the underlayer () to a physical surface treatment for breaking bonds of organic molecules constituting the insulating resin; subjecting the substrate () to a heat treatment at a temperature of 200&#xb0; C. or lower; applying a metal nanoparticle ink to the underlayer (); and sintering metal nanoparticles contained in the metal nanoparticle ink at a temperature equal to or higher than a glass transition temperature of the underlayer (). A fused layer () having a thickness of 100 nm or less is formed between the underlayer () and a metal thin film () formed by sintering the metal nanoparticles.

Method for producing metal thin film and conductive structure

Growing community of inventors

Wako, Japan

Kenjiro Fukuda