Panasonic Corporation

Kenji Yoshikawa

Kouji Makita

Takayuki Kashima

A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

Semiconductor laser device and manufacturing method thereof

In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element liand a red laser elementmonolithically integrated on an n-type semiconductor substrate i. Each of the infrared and red laser elementsandhas a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements iiandinclude p-type contact layersandon the ridges of the respective waveguides. The p-type contact layeris thinner than the p-type contact layer

Growing community of inventors

Okayama, Japan

Kenji Yoshikawa