Hitachi High-tech Corporation

Kioxia Corporaton

Kenji Yasui

Makoto Suzuki

Toshiyuki Yokosuka

Yusuke Abe

Daisuke Bizen

Mayuka Osaki

Hirohiko Kitsuki

Hideyuki Kazumi

A memory tester of the present embodiment includes a first memory, a second memory, an arithmetic circuit, and a determination circuit. The first memory is configured to store scan input data and expected value data, the scan input data including a don't care bit, the expected value data being obtained by converting the don't care bit into a first predetermined value. The second memory is configured to store scan output data and mask data obtained by converting a value of the scan input data other than the don't care bit into a second predetermined value. The arithmetic circuit is configured to perform an exclusive or operation between the expected value data and the scan output data. The determination circuit is configured to determine whether the don't care bit of an arithmetic result from the arithmetic circuit is passed or failed by using the mask data.

Memory tester and test method that uses memory tester

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

Growing community of inventors

Tokyo, Japan

Kenji Yasui