Tokyo Electron Limited

Kenji Yasuda

Shinji Nagashima

Kei Miyazaki

Kiminari Sakaguchi

Yuichiro Uchihama

Naruaki Iida

Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Substrate processing method and substrate processing apparatus

Supporting members are provided at three places, for example, on a frame section of a pair of tweezers. Each supporting member has a tapered face as an inclined guide for allowing a rim portion of a substrate to slide down to be guided to a predetermined position. A vertical wall which is formed continuing from the tapered face and being nearly perpendicular to a supported face of a wafer is provided at an upper end of the tapered face. Even when the rim portion of the wafer rises along the tapered face with the movement of the tweezers, the rim portion stops by hitting against the vertical wall, thereby preventing the wafer from falling from the tweezers.

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Kikuyo-Machi, Japan

Kenji Yasuda