Rohm Co., Ltd.

Nintendo Co., Ltd.

Arkray, Inc.

Horiba, Ltd.

Sankyo Company, Limited

Rohm Gmbh

Suntory Holdings Limited

Levex Corporation

Kenji Yamamoto

Yuki Nakano

Norikazu Ito

Ken Nakahara

Minoru Akutsu

Tetsuya Fujiwara

Masatoshi Aketa

Seigo Mori

Yasunori Kutsuma

Masaya Ueno

Minoru Nakagawa

Kiyoshi Mizuki

Satoshi Yonehara

Takeshi Shimada

Takao Fukuoka

Yuichi Ozaki

Tsutomu Kaneshige

Atsuko Katayama

Yusuke Shibata

Takashi Nakamura

Yoshihiro Sato

Heiji Watanabe

Takuji Hosoi

Takayoshi Shimura

Takao Sawano

Yukio Saito

Shuji Azumo

Yusaku Kashiwagi

Nobuyuki Yamada

Takeshi Kohno

Hirokazu Asahara

Koichi Sekiya

Hiroaki Takahasi

Nobutoshi Shimamura

Hideki Matsubayashi

Shinya Takahashi

Wakana Taguchi

Takaaki Yamanaka

Kenichi Onishi

Tsutomo Kaneshige

A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.0, a body region of the second conductivity type formed in a region of a surface layer portion of the first main surface of the semiconductor layer between the gate trench and the source trench, a source region of the first conductivity type formed in a surface layer portion of the body region, and a drain electrode connected to the second main surface of the semiconductor layer.

Semiconductor device

A nitride semiconductor device includes an electron transit layer that is formed of a nitride semiconductor, an electron supply layer that is formed on the electron transit layer, and formed of a nitride semiconductor and that has a recess which reaches the electron transit layer from a surface, a thermal oxide film that is formed on the surface of the electron transit layer exposed within the recess, a gate insulating film that is embedded within the recess so as to be in contact with the thermal oxide film, a gate electrode that is formed on the gate insulating film and that is opposite to the electron transit layer across the thermal oxide film and the gate insulating film, and a source electrode and a drain electrode that are provided on the electron supply layer at an interval such that the gate electrode intervenes therebetween.

Nitride semiconductor device and fabrication method therefor

A semiconductor device includes a chip, an electrode that is formed on the chip, an inorganic insulating layer that covers the electrode and has a first opening exposing the electrode, an organic insulating layer that covers the inorganic insulating layer, has a second opening surrounding the first opening at an interval from the first opening, and exposes an inner peripheral edge of the inorganic insulating layer in a region between the first opening and the second opening, and an Ni plating layer that covers the electrode inside the first opening and covers the inner peripheral edge of the inorganic insulating layer inside the second opening.

Power semiconductor module

An SiC semiconductor device includes an SiC semiconductor layer of a first conductivity type having a main surface, a source trench formed in the main surface and having a side wall and a bottom wall, a source electrode embedded in the source trench and having a side wall contact portion in contact with a region of the side wall of the source trench at an opening side of the source trench, a body region of a second conductivity type formed in a region of a surface layer portion of the main surface along the source trench, and a source region of the first conductivity type electrically connected to the side wall contact portion of the source electrode in a surface layer portion of the body region.

SiC semiconductor device

A nitride semiconductor device includes an electron transit layer () that is formed of a nitride semiconductor, an electron supply layer () that is formed on the electron transit layer (), that is formed of a nitride semiconductor whose composition is different from the electron transit layer () and that has a recess () which reaches the electron transit layer () from a surface, a thermal oxide film () that is formed on the surface of the electron transit layer () exposed within the recess (), a gate insulating film () that is embedded within the recess () so as to be in contact with the thermal oxide film (), a gate electrode () that is formed on the gate insulating film () and that is opposite to the electron transit layer () across the thermal oxide film () and the gate insulating film (), and a source electrode () and a drain electrode () that are provided on the electron supply layer () at an interval such that the gate electrode () intervenes therebetween.

Provided is a food or beverage product having good taste with sharp astringent taste of cycloaspartylglycine in the food or beverage product reduced. The content of cycloaspartylglycine and the weight ratio of the content of glucose to the content of maltose ([glucose]/[maltose] weight ratio) in the food or beverage product are adjusted to fall within specific ranges.

Food and beverages containing cyclo(aspartyl-glycine), glucose, and maltose

A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiOlayer and a high-k layer on the base SiOlayer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.

Semiconductor device including an MIS structure

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Kyoto, Japan

Kenji Yamamoto