Kobe Steel, Ltd.

Kaneka Corporation

Matsushita Electric Industrial Co., Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Fujikin Inc.

Kabushiki Kaisha Kobe Seiko Sho

Other

Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Kanegafuchi Chemical Industry Co., Ltd.

Iscar, Ltd.

Panasonic Corporation

Nissan Motor Company Limited

Panasonic Intellectual Property Management Co., Ltd.

Mitsubishi Heavy Industries Limited

Nippon Steel Sumitomo Metal Corporation

Kenji Yamamoto

Takashi Kuchiyama

Masashi Yoshimi

Mitsuru Ichikawa

Kunta Yoshikawa

Susumu Kato

Michio Yamaji

Daisuke Adachi

Hirotaka Ito

Susumu Kujime

Toshiki Sato

Kunihiro Nakano

Toshiaki Sasaki

Tomomi Meguro

Hironori Hayakawa

Kazuki Takahara

Maiko Abe

German Fox-Rabinovich

Yoshihisa Tawada

Shinichi Tanifuji

Hisashi Uzu

Futoshi Tada

Yuko Tawada

Nobukazu Ikeda

Tsutomu Shinohara

Hirofumi Fujii

Hiroaki Ueda

Takehisa Nakayama

Takashi Yashiki

Yoshifumi Okamoto

Takashi Suezaki

Toshio Nakamura

Atsuro Nakazato

Kazuyuki Tomisawa

Taketoshi Okubo

Masanori Yoshida

Mikako Takeda

Wataru Urushihara

Shigeyuki Chaki

Ryutaro Nishimura

Masashi Nagamine

Toru Terashita

Toshihiko Uto

Seiji Wada

Yasuhiko Shoji

Katsunori Konishi

Yoshinori Kurokawa

Yuji Mototani

Hayato Kawasaki

Masashi Hino

Toru Sawada

Yuji Arai

Tadahiro Ohmi

Kazuhiro Yoshikawa

Tomohiko Omura

Keiichi Kondo

Hiroshi Tamagaki

Tsuyoshi Tanikawa

Shigeru Itoi

Kaori Kawano

Hideo Hata

Toshikazu Hayashi

Akihiro Sakamoto

Hidekatsu Izumi

Shingo Matsuda

Toshimitsu Kohara

Koichiro Akari

Atsushi Yuge

Ryotaro Tsuji

Yusuke Tanaka

Natsuki Ichimiya

Eiichiro Yoshikawa

Shinichiro Ishitsuka

Ryohei Ashihara

Yasushi Sumihiro

Hitoshi Tamai

Jun Katoh

Jun Munemasa

Takayuki Aoi

Satoshi Hirota

Masaaki Yokoyama

Shinichi Sumiyama

Mamoru Hosokawa

Masafumi Hiraishi

Akihiko Nakajima

Tatsuya Yasunaga

Yasuyuki Yamada

Shozo Yanagida

Kazuo Okamura

Koichi Maeda

Tsutomu Nanao

Takayuki Suzuki

Isao Kubo

Naoaki Nakanishi

Tadao Okimoto

Katsuhiro Matsukado

Yoichiro Yoneda

Yasuhiro Hayashida

Tomotaka Kawano

The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution. The linear expansion coefficients of the semiconductor substrate and the lift-off layer satisfy the relational expression: the linear expansion coefficient of the lift-off layer &#x3c;the linear expansion coefficient of the semiconductor substrate, and the forming of the second semiconductor layer or the removing of the second semiconductor layer is performed at a temperature higher than the temperature in the forming of the lift-off layer.

Method for manufacturing solar cell

A photovoltaic device according to the present disclosure is provided with: a condensing optical system having chromatic aberration; a first photoelectric converter, which is arranged on an optical axis of the condensing optical system; and a second photoelectric converter, which is arranged on an outer peripheral side of the first photoelectric converter when viewed from an optical axis direction of the condensing optical system, and which has a bandgap lower than a bandgap of the first photoelectric converter, wherein the first photoelectric converter is arranged on an inner side of a rectangle that circumscribes a condensing region of absorbable longest-wavelength light determined based on the bandgap.

Photovoltaic device

An arc evaporation source () according to one embodiment of the present invention comprises: a ring-shaped circumferential magnet () which is so arranged as to surround the outer circumference of a target () along a direction in which the direction of magnetization becomes parallel with the front surface of the target; and a rear surface magnet () which is arranged on the rear surface side of the target () along a direction in which the direction of magnetization becomes perpendicular to the front surface of the target. The magnetic pole of the circumferential magnet () on the inner side in the radial direction and the magnetic pole of the rear surface magnet () on the target () side have the same polarity as each other.

Arc evaporation source

The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

Solar cell and method for manufacturing same

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Substrate with transparent electrode and method for producing same

A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nmor more and the number of the continuous regions is 50/&#x3bc;mor more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

Substrate with transparent electrode and method for manufacturing same

In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Solar cell module and method for manufacturing same

A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.

Method for manufacturing multijunction photoelectric conversion device

The present invention provides a substrate with conductive layers, capable of improving both glare preventing properties and etching characteristics; a method for fabricating the same; and a substrate with touch-panel transparent electrodes. A substrate with conductive layers has, on at least one side of a transparent film substrate, a thin film underlayer, a metal oxide layer, and a first metal layer formed in this order. The thin film underlayer comprises nickel and copper or nickel oxide and copper oxide, the metal oxide layer comprises nickel oxide and copper oxide, and the first metal layer comprises of at least one of gold, silver, and copper. The substrate preferably satisfies the following relational expressions: [1] the thickness of the thin film underlayer is 20 nm or less; [2] the thickness of the metal oxide layer is 80 nm or less; and [3] the thickness of the thin film underlayer is equal to or less than the thickness of the metal oxide layer.

Substrate with conductive layers, substrate with touch-panel transparent electrodes, and method for fabricating same

An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.

I-V measurement device for solar cell, manufacturing method for solar cell, and solar cell module

A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Multi-junction photoelectric conversion device and photoelectric conversion module

A laminated hard coating comprising a layer A and a layer B, wherein the layer A and the layer B differ in composition and are laminated. Layer A contains (MAlCrTa)(BCN) and satisfies 0&#x2264;a&#x2264;0.35, 0.05&#x2264;d&#x2264;0.35, 0&#x2264;x&#x2264;0.15, 0&#x2264;y&#x2264;0.50, a+b+c+d=1, and x+y+z=1. M is at least one element selected from the group consisting of V, Nb, Mo, and W; a, b, c and d represent the atomic ratios of M, Al, Cr, and Ta, respectively; and x, y, and z represent the atomic ratios of B, C and N, respectively. The layer B comprises (TiSi)(BCN) and satisfies 0.05&#x2264;&#x3b2;&#x2264;0.35, 0&#x2264;x&#x2264;0.15, 0&#x2264;y&#x2264;0.50, &#x3b1;+&#x3b2;=1, and x+y+z=1. &#x3b1; and &#x3b2; represent the atomic ratios of Ti and Si, respectively, and x, y, and z represent the atomic ratios of B, C, and N, respectively. One or more layers of each of these layers have been alternately laminated.

Laminated hard film and cutting tool

A cutting tool has a substrate. A surface of the substrate for the cutting tool is covered with a hard film. In the cutting tool, the hard film has a root-mean-square slope R&#x394;q in a surface of the hard film of 0.060&#xb0; or less.

Cutting tool

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Disclosed is a hard film based on tungsten carbide excellent in wear resistance, wherein the composition of the film is defined by WCM, where 0.01&#x2264;y&#x2264;0.2, 0.50&#x2264;x/(1&#x2212;x&#x2212;y)&#x2264;4.0, and M is one or more selected from Co, Ni, Fe and Cu.

Hard film and method for forming same, and die for use in hot forming of steel sheet

Growing community of inventors

Kobe, Japan

Kenji Yamamoto