Kabushiki Kaisha Toshiba

Kenji Tsuchiya

Tatsuya Tanaka

Kazuhide Yoneya

Kazuki Oda

Noboru Ohtsuka

According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array including regular memory cells and permanent memory cells and a control circuit. The regular memory cells are capable of switching between a first data storage state and a second data storage state. The permanent memory cells are fixed in a third data storage state that is read as the same logic level data as the first storage state. Data is stored in at least one of the regular memory cells and at least one of the permanent memory cells. The control circuit rewrites at least one of the regular memory cells from the second data storage state to the first data storage state at the time of data holding. The control circuit performs a reading operation after rewriting the regular memory cells from the first data storage state to the second data storage state.

Nonvolatile semiconductor memory device

A semiconductor memory device includes a first nonvolatile memory which has a first external interface and is capable of recording 1-bit data in one memory cell, a second nonvolatile memory which has a test terminal interface and is capable of recording a plurality of data in one memory cell, and a control unit which has a second external interface and is configured to control a physical state of an inside of the second nonvolatile memory.

Growing community of inventors

Yokohama, Japan

Kenji Tsuchiya