Hitachi, Ltd.

Renesas Technology Corp.

Mitsubishi Materials Corporation

Hitachi Plant Engineering Construction Co., Ltd.

Semiconductor Leading Edge Technologies, Inc.

Trecenti Technologies, Inc.

Other

Hitachi Engineering Co., Ltd.

Kenji Tokunaga

Shigeo Hatamiya

Kazuhito Koyama

Masahiko Yamagishi

Tsutomu Okusawa

Yukio Ishigaki

Taiko Ajiro

Megumi Sunou

Hideo Tawara

Kiyoshi Kamitani

Shigeru Kobayashi

Koji Kato

Yoshiaki Kobayashi

Teruo Minami

Akihiro Shimizu

Tetsuzo Kuribayashi

Norio Kajita

Shinyo Kimoto

Katsunori Sakata

Keiji Saitou

Yoshiaki Inaba

Daisuke Kimoto

This rapid-hardening mortar composition includes: a rapid-hardening admixture; cement; and a fine aggregate, wherein the cement is contained in an amount of 100 parts by mass to 2,000 parts by mass with respect to 100 parts by mass of the rapid-hardening admixture, the rapid-hardening admixture is a composition that contains: calcium aluminate; inorganic sulfate in an amount of 50 parts by mass to 200 parts by mass with respect to 100 parts by mass of the calcium aluminate; and a setting modifier in an amount of 0.1 parts by mass to 10 parts by mass with respect to 100 parts by mass of the calcium aluminate, and an average particle diameter of the calcium aluminate is in a range of 8 &#x3bc;m to 100 &#x3bc;m, and an average particle diameter of the setting modifier is in a range of 5 &#x3bc;m or less.

Rapid-hardening mortar composition

The present invention provides a rapid-hardening admixture for accelerating hardening of a cement composition and a method for producing the same. The rapid-hardening admixture includes calcium aluminate, inorganic sulfate, and a setting modifier, in which the calcium aluminate has an average particle diameter in a range of 8 &#x3bc;m to 100 &#x3bc;m, and the setting modifier has an average particle diameter of 5 &#x3bc;m or less.

Rapid-hardening admixture and method for producing same

This rapid-hardening cement composition includes: a rapid-hardening admixture; and cement in an amount of 100 parts by mass to 2,000 parts by mass with respect to 100 parts by mass of the rapid-hardening admixture, wherein the rapid-hardening admixture is a composition that contains: calcium aluminate; inorganic sulfate in an amount of 50 parts by mass to 200 parts by mass with respect to 100 parts by mass of the calcium aluminate; and a setting modifier in an amount of 0.1 parts by mass to 10 parts by mass with respect to 100 parts by mass of the calcium aluminate, and an average particle diameter of the calcium aluminate is in a range of 8 &#x3bc;m to 100 &#x3bc;m, and an average particle diameter of the setting modifier is in a range of 5 &#x3bc;m or less.

Rapid-hardening cement composition

When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. An apparatus is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Semiconductor container opening/closing apparatus and semiconductor device manufacturing method

When atmosphere inside a wafer carrier is replaced by introducing a gas into the wafer carrier from a gas inlet provided to the wafer carrier that can accommodate wafers. At the same time, the atmosphere inside the wafer carrier is sucked to make an inside pressure negative relative to an outside pressure.

Wafer carrier, wafer conveying system, stocker, and method of replacing gas

When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. A method is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Method of manufacturing a semiconductor integrated circuit device which prevents foreign particles from being drawn into a semiconductor container containing semiconductor wafers

In a semiconductor device manufacturing process using a low-dielectric-constant insulation film as an interlayer insulation film, a stress exerted on wiring layers and interlayer insulation films is reduced. In a semiconductor device in which a plurality of buried wiring layers are formed in the interlayer insulation films each formed of a low-dielectric-constant insulation film lower in mechanical strength than a silicone oxide film formed by, for example, a CVD method, a first layer of wiring, on a lower layer of which a low-dielectric-constant insulation film is not disposed, serves as a bonding pad, and bump electrodes are formed on the wiring so as to become higher than a position where the uppermost buried wiring is formed.

Semiconductor device and manufacturing method thereof

A FOUP having semiconductor wafers received therein is transferred to a loading port and then the door of the FOUP is fixed and removed by a FIMS door and then the semiconductor wafers are taken out of the shell of the FOUP and then a predetermined manufacturing processing is performed to the semiconductor wafers. After performing the manufacturing processing, the semiconductor wafers are returned into the shell and the FIMS door is returned to a closed position and the shell is retracted about 50 mm to 65 mm to form a gap between the FIMS door and the shell. Then, purge gas is introduced from a gas introduction pipe arranged above the loading port on the left and right sides in a slanting forward direction of the FIMS door into the shell to replace the atmosphere in the shell with the purge gas.

Method of purging wafer receiving jig, wafer transfer device, and method of manufacturing semiconductor device

Atmosphere inside a wafer carrier is purged through an open face of the wafer carrier, in the state where a carrier door constituting a face of the wafer carrier is opened by a load port door. Purging is carried out by partitioning a mini-environment with an upper wall surface, a lower wall surface, and an EFEM door into a predetermined space adjacent to the open face, by discharging gas from the predetermined space through an exhaust opening, and by supplying an inert gas or a dry air from a gas supply port into the predetermined space.

Load port, wafer processing apparatus, and method of replacing atmosphere

A waste-to-energy incineration system, in which the amount and heat value of exhaust gas largely changes in long and short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which is able to stably decompose generated dioxin in waste incineration exhaust gas.

Waste processing system and fuel reformer used in the waste processing system

A cylinder of the invention can precisely send out a piston rod into four different positions and comprises: a spring receiving member placed coaxially with piston rod in a piston room (I-II) of a cylinder tube so that the movement of spring receiving member is limited by one end of the piston room; a first spring member to separate the spring receiving member from the piston; a stopper formed on piston rod to limit spring receiving member from moving in the opposite direction to piston , a hollow formed on the periphery of piston rod at farther position from piston than stopper ; and a stop pin installed in the cylinder tube to be pressed in the direction of hollow by a second spring member to engage with hollow , wherein the movable length of piston rod while stop pin is engaged with hollow is larger than movable distance of spring receiving member from the piston. A load port and a production system of this invention are constructed using the cylinder.

Cylinder, load port using it, and production system

In a load port mechanism of a substrate treatment unit, protuberances are provided on a sealing surface formed along a door with which a wafer carrier is to dock, or on a sealing surface formed around the door of the wafer carrier. The wafer carrier door is faced with the load port door with the protuberances therebetween, thereby separating the sealing surface of the substrate treatment unit from the sealing surface of the wafer carrier by only a predetermined distance. Thus, there is formed a channel along which clean air flows from the inside of the substrate treatment unit to the outside thereof. The load port structure and the wafer carrier structure improve the reliability of opening/closing action of the wafer carrier and prevent entry of extraneous particles into the treatment unit with sufficient reliability, and enable high-yield production of integrated circuits.

Load port system for substrate processing system, and method of processing substrate

A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas largely changes in long and a short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which is able to stably decompose generated dioxin in waste incineration exhaust gas.

A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas changes during operation, includes an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, and a superheater for superheating steam generated in the boiler. A steam turbine is provided which is driven by steam superheated by the superheater and a generator is driven by the steam turbine. A fuel reformer is provided for reforming source fuel. A combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas fed from the incinerator is provided which decomposes generated dioxin in waste incineration exhaust gas.

Growing community of inventors

Tokyo, Japan

Kenji Tokunaga