Canon Kabushiki Kaisha

Kenji Togo

Masatsugu Itahashi

Takehito Okabe

Hideaki Ishino

Ryuichi Mishima

Hiroaki Sano

Yoshiyuki Hayashi

Hiroaki Naruse

Sho Suzuki

Sakae Hashimoto

Yukinobu Suzuki

Mitsuhiro Yomori

Keita Torii

Takuya Hara

Tomoyuki Tezuka

Daichi Seto

Norihiko Nakata

The distance between an upper end of a light-shielding portion and a photoelectric conversion layer is longer than the distance between the lower surface of a light-shielding film and the photoelectric conversion layer. The distance between a lower end of the light-shielding portion and the photoelectric conversion layer is shorter than the distance between the lower surface of the light-shielding film and the photoelectric conversion layer. In a plane including the light-shielding film and the light-shielding portion, an opening defined by the light-shielding portion and a gap between the light-shielding portion and the light-shielding film are provided, and the width of the gap is smaller than the width of the opening.

Photoelectric conversion apparatus and equipment

A photoelectric conversion apparatus is provided. The apparatus comprises a pixel region in which a plurality of pixels each including a photoelectric conversion portion and a charge holding portion formed in a substrate are arranged, and a peripheral region. Above the substrate, an electrically conductive layer including an electrode pattern for transferring charges in the photoelectric conversion portion to the charge holding portion, a wiring layer including a wiring pattern electrically connected to the electrode pattern, an interlayer film arranged between the wiring layer and the substrate, a metal layer arranged between the interlayer film and the substrate and arranged so as to cover at least the charge holding portion and the electrode pattern are provided. In the peripheral region, the metal layer covers at least an upper surface of an electrically conductive pattern included in the electrically conductive layer.

Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region

A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Manufacturing method of semiconductor device

A method for manufacturing a conversion device is provided. Formed are an insulating layer that covers at least conversion portion is formed; a protection layer for suppressing formation of a metal-semiconductor compound layer, at a position where the protection layer covers the conversion portion via the insulating layer, covers at least part of an element isolation region, and exposes a transistor; and a metal film on the protection layer and the transistor. A metal-semiconductor compound layer on the transistor by performing heating process is formed. Metal that has not been reacted by the heating process is removed from the substrate. After that, an upper side in portions of the protection layer covering the conversion portion and the at least part of the element isolation region are removed.

Method for manufacturing photoelectric conversion device

A photoelectric conversion apparatus includes a semiconductor substrate on which a photoelectric conversion element and a transistor are arranged and a plurality of wiring layers including a first wiring layer and a second wiring layer above the first wiring layer, in which a connection between the semiconductor substrate and any of the plurality of wiring layers, between a gate electrode of the transistor and any of the plurality of wiring layers, or between the first wiring layer and the second wiring layer, has a stacked contact structure.

Photoelectric conversion apparatus, image pickup system, and manufacturing method therefor

A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T&#x3c;T&#x3c;&#x3bb;/2&#x2212;Tis satisfied, where an optical thickness of the first region is T, an optical thickness of the second region is T, and a wavelength of a light incident on the photoelectric conversion part is &#x3bb;.

Photoelectric conversion device and imaging system

In a method for manufacturing a semiconductor device, a process of providing a semiconductor wafer having a wiring layer having conductive patterns and a plurality of insulation films containing a first insulation film surrounding side surfaces of the conductive patterns are provided. After the process of providing the semiconductor wafer, a process of removing some regions of the plurality of insulation films to form openings is provided. Herein, the first insulation film is disposed to a position closer to the circumference of the semiconductor wafer than a position closest to the outermost circumference of the wafer among the arrangement positions of the conductive patterns.

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Kawasaki, Japan

Kenji Togo