Hitachi, Ltd.

Hitachi-high-technologies Corporation

Canon Kabushiki Kaisha

Hitachi High-tech Corporation

Yamaha Hatsudoki Kabushiki Kaisha

Kenji Tamaki

Akira Kagoshima

Daisuke Shiraishi

Ryoji Asakura

Junichi Tanaka

Shinji Sakai

Osamu Koyama

Toshio Masuda

Hideyuki Yamamoto

Masahiro Sumiya

Hisatoshi Baba

Masayuki Usui

Hirotake Ando

Yoshihiko Watanabe

Hideo Nakajima

Toshiharu Miwa

Natsuyo Morioka

Tadashi Kato

Shoji Ikuhara

Hiroyuki Kitsunai

Shota Umeda

Masahiro Watanabe

Yasuhiro Yoshitake

Masaki Ishiguro

Motohiko Yoshigai

Satomi Inoue

Mitsuhiro Enomoto

Yoshinao Arai

Yoshito Kamaji

Youichi Nonaka

Jun Tateishi

Masahiro Hoshino

Hiroto Sekiguchi

Tomise Koyama

Yoshihisa Kato

In a plasma processing apparatus, occurrence of unplanned maintenance is predicted in advance so that a time when the work should be incorporated into planned maintenance can be determined. An apparatus diagnostic apparatus including a degradation score estimation unit that receives an output of a sensor mounted on a plasma processing apparatus and estimates a degradation score of the plasma processing device; a maintenance work occurrence probability estimation unit that calculates a probability of occurrence of an unplanned maintenance work that is not included in an original maintenance plan based on the degradation score; an actual maintenance cost calculation unit that calculates an actual maintenance cost; and a plan incorporated maintenance cost calculation unit that outputs a correction plan of maintenance plan in which the original maintenance plan is corrected by incorporating the unplanned maintenance work based on the probability of occurrence of the unplanned maintenance work.

Apparatus diagnostic apparatus, apparatus diagnostic method, plasma processing apparatus and semiconductor device manufacturing system

In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution.

Diagnosis apparatus, plasma processing apparatus and diagnosis method

A manufacturing defect factor searching method includes: classifying manufacturing monitoring data into a set of non-defective products having an inspection result indicating a non-defective product and a set of defective products having the inspection result indicating a defective product, in accordance with a correspondence relationship between the manufacturing monitoring data and product inspection data indicating the inspection result of the product manufactured in the manufacturing line, the manufacturing monitoring data being collected from a manufacturing line of a product and being multivariate; estimating, for each item of the manufacturing monitoring data, a mixture distribution function approximating to a statistical distribution of each of the set of non-defective products and the set of defective products; resolving the mixture distribution function into components; and generating a list of items including a resolved component having a correlation with a manufacturing quality defect from among items of the manufacturing monitoring data.

Manufacturing defect factor searching method and manufacturing defect factor searching apparatus

In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Plasma processing apparatus and data analysis apparatus

There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Analysis method and semiconductor etching apparatus

A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Plasma processing apparatus, plasma processing method and plasma processing analysis method

A technology is provided to enable lowering the fault generation rate related to a parts installation device. A parts installation device () (calculation device ()) fetches or calculates state parameter values that represent the relative position relationship or the distance of a part holder and a part during the operation of removing and holding, calculates the fluctuation values of the state parameters, and corrects parameters having a small increase in the cycle time and is effective in reducing fluctuations among the parameter values of the holding position of the part holder, stop time, operating speed, and operation acceleration when the value of the fluctuations exceeds a first threshold.

Setting operation control in parts mounting device by reducing a variation of a distance value

An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element.

Plasma processing apparatus and analyzing apparatus

A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus

An abnormality monitoring process milt () divides sensor data collected from a monitoring-target apparatus () into sensor data for each of a plurality of condition modes based on a condition-mode transition point detected by a condition-mode transition point detecting process unit (), and sorts the divided sensor data into a plurality of groups. Next, for each condition mode and each group, each piece of sensor data is compared with past statistic data, thereby detecting an abnormality. A causal diagnosis process unit () diagnoses an abnormality cause using link models before and after an abnormality is detected built based on a correlation coefficient between two pieces of sensor data in each group.

Monitoring diagnostic device and monitoring diagnostic method

Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.

Analysis method, analysis device, and etching processing system

A technique relating to an apparatus abnormality diagnosis system, capable of easily creating and adding/updating an diagnosis model with respect to an initial and new failure case, and appropriately and efficiently achieving diagnosis of abnormality and instruction of operation using the model. In the abnormality diagnosis system, an diagnosis model creating process unit creates a structured abnormality model expressing a structured abnormality of maintenance operation type to an alarm and apparatus event relating to the maintenance operation type by a graph network structure based on acquisition of maintenance operation data. And, by synthesizing the structured abnormality model with an existing structured abnormality model, the diagnosis model is updated.

Apparatus abnormality diagnosis method and system

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Kawasaki, Japan

Kenji Tamaki