Sony Corporation

Sony Semiconductor Solutions Corporation

Kenji Takeo

Takeshi Takeda

Tadayuki Dofuku

Ryo Takahashi

Toshiyuki Ishimaru

Yasuhiro Shikahama

The present technology includes: a substrate, a stepped structure being formed on one surface of the substrate, the stepped structure having a stepped surface having a different height from the one surface; and a coating layer that continuously covers the stepped structure and the one surface on a periphery of the stepped structure and causes light to be transmitted therethrough or reflects the light.

Optical element, optical element array, lens group, electronic apparatus, and method of producing optical element

The present disclosure relates to a circuit board, a semiconductor device, an imaging device, a solid-state image sensor, a method for manufacturing a solid-state image sensor, and an electronic apparatus that suppress a decrease in characteristics and a yield. A step portion formed on a substrate surface is configured in a divided state. With this configuration, a photoresist liquid dropped in a lithography process flows through a gap between the divided step portions so that the photoresist liquid uniformly flows on an imaging surface, whereby a decrease in characteristics and a yield due to application unevenness can be suppressed. The present disclosure can be applied to a solid-state image sensor.

Circuit board, semiconductor device, imaging device, solid-state image sensor, method for manufacturing solid-state image sensor, and electronic apparatus

A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer.

Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device

A manufacturing method of a semiconductor device includes the steps of: forming first and second alignment marks by forming first and second alignment mark grooves on a first surface of a semiconductor substrate and filling the grooves with a material different from the semiconductor substrate; forming a first element on the first surface in alignment using the first alignment mark; bonding a support substrate to the first surface; reversing a bonded structure of the support substrate and the semiconductor substrate around a predetermined axis and thinning the semiconductor substrate from a second surface side of the semiconductor substrate at least until a thickness with which a position of the second alignment mark is detected by reflected light obtained by application of alignment light from the second surface side of the semiconductor substrate is obtained; and forming a second element on the second surface in alignment using the second alignment mark.

Growing community of inventors

Kanagawa, Japan

Kenji Takeo