Samsung Electronics Co., Ltd.

Kenji Takai

Do Yoon Kim

Eigo Miyazaki

Sang Eui Lee

Bo-un Yoon

Boun Yoon

Sang-kyun Kim

Do-Yoon Kim

Daiki Minami

Bo-yun Kim

A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C&#xd7;100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

Polishing slurry and method of manufacturing semiconductor device

A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

Metal structure and method of manufacturing the same and metal wire and semiconductor device and electronic device

A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

Plating solution and metal composite and method of manufacturing the same

A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

Polishing slurry, method of manufacturing the same, and method of manufacturing semiconductor device

A polishing slurry includes a carbon polishing particle and an exothermic material.

Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.

Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same

A flexible electrically conductive structure includes: a first polymer layer; and an electrically conductive layer disposed on a surface of the first polymer layer, wherein the electrically conductive layer includes an electrically conductive metal and a nanocarbon material, and wherein the flexible wiring board is to be used with a bending portion provided at least one position of the electrically conductive layer.

Growing community of inventors

Hwaseong-si, South Korea

Kenji Takai