Tokyo Electron Limited

Pioneer Electronic Corporation

Pioneer Video Corporation

International Business Machines Corporation

Tokyo Electron Limi Ted

Kenji Suzuki

Tadahiro Ishizaka

Gerrit J Leusink

Emmanuel P Guidotti

Atsushi Gomi

Masamichi Hara

Yasushi Mizusawa

Daisuke Kuroiwa

Fenton Read McFeely

Miho Jomen

Sandra Guy Malhotra

Tatsuo Hatano

Toshihiko Takishita

Masahiko Matsudo

Minemasa Ohta

Kazuya Okubo

Takahiro Kobayashi

Jiro Fujimori

Satoru Fukuoka

Jonathan Rullan

Naoto Kozasa

Taro Ikeda

Yumiko Kawano

Hideaki Yamasaki

Mirko Vukovic

Kiyohide Ogasawara

Hiroshi Ito

Mitsuhiro Tachibana

Frank M Cerio, Jr

Kunihiro Tada

Hiroyuki Toshima

Takashi Sakuma

Osamu Yokoyama

Takanobu Hotta

Koji Maekawa

Shigeru Mizuno

Tatsuo Hirasawa

Katsuhito Hirose

Chiaki Yasumuro

Atsushi Shimada

Shigenori Murakami

Cheonsoo Han

Emmanuel Guidotti

Takeshi Shinohara

Robert R Young, Jr

Hirokazu Hashikawa

Tsuyoshi Hayashi

Tuyoshi Hayashi

Fenton R Mcfeely

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

Deposition device and deposition method

In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplies of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplies of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.

Method of forming tungsten film

When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru(CO)gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

Method for manufacturing semiconductor device

Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring.

Copper wiring forming method with Ru liner and Cu alloy fill

In a Cu wiring structure forming method, a barrier film serving as a Cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an Al-containing Cu film. A Cu wiring is formed from the Al-containing Cu film, and a cap layer including a Ru film is formed on the Cu wiring. Further, an interface layer containing a Ru&#x2014;Al alloy is formed at an interface between the Cu wiring and the cap layer by heat generated in forming the cap layer or by a heat treatment performed after forming the cap layer. A second insulating film is formed on the cap layer.

Copper wiring structure forming method

There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.

Method for forming copper wiring

A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

Method for forming Cu wiring

A method and apparatus for treating a substrate in a processing system. The processing system includes a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate and heat the substrate, and a process gas delivery system coupled to the process chamber and configured to introduce a process gas to a process space above an upper surface of the substrate. Furthermore, the process chamber includes one or more apparatus surfaces in radiative communication with the upper surface of the substrate and having a low emissivity and/or high reflectivity.

Method and apparatus for reducing substrate temperature variability

A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.

Method and apparatus for reducing particle contamination in a deposition system

A method is provided for controlling copper agglomeration on a substrate and for forming void-free bulk copper metal filling of recessed features in integrated circuits. In one embodiment, the method includes providing a substrate having a topography including a top surface and at least one recessed feature comprising at least a sidewall surface and a bottom surface, depositing a barrier film on the substrate topography, and depositing a metal-containing wetting film on the barrier film. The method further includes physical vapor depositing copper metal on the metal-containing wetting film, where the substrate temperature is sufficiently high to form a smooth copper metal seed layer on the metal-containing wetting film. Void-free bulk copper metal may be plated in the at least one recessed feature.

Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer

A system for introducing a precursor vapor to a processing chamber configured for forming a thin metal on a substrate is described. The vapor delivery system includes means for introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.

System for introducing a precursor gas to a vapor deposition system

A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.

Void-free copper filling of recessed features for semiconductor devices

A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.

Method for performing a vapor deposition process

A method for introducing a precursor vapor to a process chamber configured for forming a thin film on a substrate is described. The method includes transporting a process gas containing metal precursor vapor and a CO delivery gas to a process chamber, and introducing a CO saturation gas to the precursor vapor in the process chamber and optionally adjusting the spatial distribution of the CO saturation gas addition in order to affect improvements to the properties of the deposited film.

Method for reducing carbon monoxide poisoning in a thin film deposition system

A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain a solid precursor, and permit the flow of a carrier gas. Furthermore, each tray comprises precursor stabilization elements designed to maintain a substantially level solid precursor powder during transport of the multi-tray precursor evaporation system.

Ampule tray for and method of precursor surface area

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Guilderland, NY, United States of America

Kenji Suzuki