Tokyo Electron Limited

Kenji Sudou

Naoki Mihara

Naoki Matsumoto

Jun Yoshikawa

Kazuki Moyama

Nobuyuki Okayama

Michitaka Aita

Takahiro Senda

Wataru Yoshikawa

Kazuyuki Kato

Kazuki Takahashi

Yoshiyasu Sato

Kazuo Murakami

Yugo Tomita

Yasuhiro Otsuka

Hitoshi Mizusugi

Satoshi Furukawa

A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Manufacturing method of sample table

In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Plasma processing method and plasma processing apparatus

There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

Plasma processing apparatus and gas supply member support device

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Miyagi, Japan

Kenji Sudou