Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kenji Shirako

Tomoshi Taniyama

Takayuki Nakada

Akihiro Sato

Shuhei Saido

Takatomo Yamaguchi

Daigi Kamimura

Kazuhiro Morimitsu

Hironori Shimada

Masanao Fukuda

Akira Horii

Norihiro Yamashima

Kazuo Tanaka

Masaaki Ueno

Daisuke Hara

Hideto Yamaguchi

Yukitomo Hirochi

Masashi Sugishita

Takashi Nogami

Shinobu Sugiura

Akinori Tanaka

Yasuaki Komae

Sadao Nakashima

Takeshi Itoh

A substrate processing apparatus includes a boat including plural slots to hold at least one substrate, a process furnace that processes the at least one substrate held in the boat, a boat elevator that raises and lowers the boat, a transfer device that transfers the at least one substrate between plural carriers where the at least one substrate is stored and the boat, and a controller capable of controlling the boat elevator and the transfer device, wherein the controller sets plural positions where the transfer device transfers the at least one substrate to the boat elevator, and select the positions to minimize a number of shifts among the positions of the boat elevator or total time taken during the shifts.

Substrate processing apparatus and method of manufacturing semiconductor device

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.

Substrate processing apparatus

A technique for improving stability and safety at the time of boat transfer is provided. A reaction tube configured to process a substrate, a seal cap, provided on an upper surface thereof with a substrate retainer for retaining the substrate, configured to close a furnace opening of the reaction tube, one of a first elevator and a second elevator configured to elevate the seal cap; and another of a first elevator and a second elevator configured to assist the one of the first elevator and the second elevator in elevating the seal cap.

There is provided a technique that includes: a first processing module including a first processing chamber for processing vertically arranged substrates; a second processing module including a second processing chamber for processing the substrates, the second processing chamber disposed adjacent to the first processing chamber; a first exhaust box storing a first exhaust system exhausting the first processing chamber; a second exhaust box storing a second exhaust system exhausting the second processing chamber; a common supply box controlling at least one of a flow path and a flow rate of process gases supplied into the first and second processing chambers; a first valve group connecting gas pipes from the common supply box to the first processing chamber such that a communication state is controllable; and a second valve group connecting the gas pipes from the common supply box to the second processing chamber such that a communication state is controllable.

Substrate processing apparatus, and method of manufacturing semiconductor device

A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.

Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.

Substrate processing apparatus capable of switching control mode of heater

Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.

There are provided a substrate processing apparatus capable of suppressing leakage of magnetic field during processing of a substrate. The substrate processing apparatus of the present invention includes: a reaction tube having a processing chamber provided therein to process a substrate; an induction heating unit installed outside of the reaction tube to accommodate the reaction tube, wherein the induction heating unit is configured to electromagnetically induction-heat the processing chamber by generating a magnetic field; an accommodation tube installed outside of the induction heating unit to accommodate the induction heating unit, wherein the accommodation tube accommodates the reaction tube and the induction heating unit in an air-tight manner; a shielding unit made of a conductive material installed to surround an outside of the accommodation tube; and an inert gas supply unit installed in a gap between the reaction tube and the accommodation tube where the induction heating unit is installed, wherein the inert gas supply unit is configured to supply an inert gas into the gap.

Substrate processing apparatus including shielding unit for suppressing leakage of magnetic field

Provided is a heat treatment apparatus that can form films having a uniform thickness on a plurality of substrates. The heat treatment apparatus comprises a process chamber configured to grow silicon carbide (SiC) films on wafers, a boat configured to hold a plurality of wafers in a state where the wafers are vertically arranged and approximately horizontally oriented so as to hold the wafers in the process chamber, a heating unit installed in the process chamber, and a gas supply nozzle configured to supply a reaction gas. The heating unit comprises a susceptor configured to cover at least a part of the boat, and a susceptor wall disposed between the boat and the susceptor.

Heat treatment apparatus

A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

Growing community of inventors

Toyama, Japan

Kenji Shirako