Mitsubishi Chemical Corporation

Mitsubishi Kasei Corporation

Seoul Viosys Co., Ltd.

Tohoku University

Mitsubishi Monsanto Chemical Co., Ltd.

Director General Agency of Industrial Science and Technology

Kenji Shimoyama

Hideki Gotoh

Hideki Goto

Kazumasa Kiyomi

Nobuyuki Hosoi

Katsushi Fujii

Satoru Nagao

Yoshihito Sato

Yuichi Inoue

Ki Bum Nam

Toshinari Fujimori

Kaori Kurihara

Makiko Hashimoto

Atsunori Yamauchi

Chang Yeon Kim

Dae Sung Cho

Chae Hon Kim

Jong Kyun You

Hideyoshi Horie

Seung Kyu Choi

Jung Whan Jung

Yuuki Enatsu

Young Wug Kim

Kenji Iso

Masahiro Noguchi

Hirobumi Nagaoka

Takahide Joichi

Tadahiro Katsumoto

Hiroyuki Shibata

Yuki Haruta

Yoshihiro Suzuki

Hiroyoshi Yajima

Itaru Sakamoto

Yoshio Waseda

Goto Hideki

Satosi Kikuchi

Junichi Shimada

Provided are: a GaN substrate wafer having a crystallinity suitable as a substrate for a semiconductor device as well as an improved productivity; and a method of producing the same. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In this GaN substrate wafer, the second region has a minimum thickness of not less than 20 μm, the concentration of at least one element selected from Li, Na, K, F, Cl, Br, and I in the first region is 1×10atoms/cmor higher, and the second region satisfies one or more conditions selected from the following (a) to (c): (a) the Si concentration is 5×10atoms/cmor higher; (b) the O concentration is 3×10atoms/cmor lower; and (c) the H concentration is 1×10atoms/cmor lower.

GaN substrate wafer and method for manufacturing same

Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

Gallium nitride-based light emitting diode

Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

High efficiency light emitting diode and method of fabricating the same

A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Nitride light-emitting diode element and method of manufacturing same

Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G) containing Hgas, GaCl gas (G), and NHgas (G) to a reaction chamber (), and setting the growth temperature at 900 (&#xb0; C.) (inclusive) to 1,200 (&#xb0; C.) (inclusive), the growth pressure at 8.08&#xd7;10(Pa) (inclusive) to 1.21&#xd7;10(Pa) (inclusive), the partial pressure of the GaCl gas (G) at 1.0&#xd7;10(Pa) (inclusive) to 1.0&#xd7;10(Pa) (inclusive), and the partial pressure of the NHgas (G) at 9.1&#xd7;10(Pa) (inclusive) to 2.0&#xd7;10(Pa) (inclusive).

Gallium nitride-based material and method of manufacturing the same

This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (W ) at an opening center of the stripe-shaped opening is different from either or both of a width (W ) of the opening front end and a width (W ) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

Semiconductor optical device apparatus

The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.

Semiconductor device and method for manufacturing the same

In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Semiconductor light-emitting device

A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

Semiconductor light-emitting device and manufacturing method for the same

The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

Semiconductor light-emitting devices

A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.

Method of manufacturing a group II-VI compound semiconductor

Growing community of inventors

Ushiku, Japan

Kenji Shimoyama