Mitsubishi Gas Chemical Company, Inc.

Jfe Steel Corporation

Kenji Shimada

Toshiyuki Oie

Hiroshi Matsunaga

Kojiro Abe

Kenji Yamada

Masaru Ohto

Hiroshi Yoshida

Kenichi Takahashi

Aya Ito

Kenji Oi

Akinobu Horita

Satoshi Tamai

Naoya Hayakawa

Atsushi Ishigami

Priangga Perdana Putra

Ryota Nakayama

Masahiro Odaka

Suguru Haraki

According to the present invention, a method for treating the surface of a semiconductor substrate can be provided, the method including bringing the semiconductor substrate into contact with a liquid composition to impart alcohol repellency to the semiconductor substrate, wherein the liquid composition is characterized by containing: 0.01 to 15% by mass of each of at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof; and water. (In formulae (1) to (6), Ris selected from the group consisting of compounds in each of which a hydrogen atom in an alkyl group having 2 to 10 carbon atoms is substituted by a fluorine atom; Ris selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms and others; Ris selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group; R, Rand Rare independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; R, Rand Rare independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; Xis selected from the group consisting of a hydroxide ion and others; and a represents an integer of 3 to 20 inclusive.)

Surface treatment method for imparting alcohol repellency to semiconductor substrate

A liquid composition for imparting alcohol-repellency to a semiconductor substrate material and a method for treating a semiconductor substrate surface using the liquid composition, are disclosed. The liquid composition contains: a surfactant (A) having a substituent of formula (1) (where n is an integer of 3 to 20), and an anionic hydrophilic group; and a compound (B) being selected from the group consisting of compounds having a polyethylenimine and a substituent of formula (2) or formula (3) (where R, R, Rand Rare each independently hydrogen or a C1-6 alkyl, alkenyl, alkynyl, or aryl, and Xis a fluoride ion, a chloride ion, a bromide ion, an iodide ion, a fluoroborate ion, a phosphate ion, an acetate ion, a trifluoroacetate ion, a sulfate ion, a hydrogen sulfate ion, a methane sulfate ion, a hydroxide ion, a perchlorate ion, or a nitrate ion). 

Liquid composition for imparting alcohol-repellency to semiconductor substrate material, and method for treating surface of semiconductor substrate using said liquid composition

The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.

Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using same

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

Semiconductor element cleaning solution that suppresses damage to cobalt, and method for cleaning semiconductor element using same

It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.

Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling wafer

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.

Semiconductor element cleaning solution that suppresses damage to tantalum-containing materials, and cleaning method using same

The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed.

Semiconductor element cleaning liquid and cleaning method

A liquid semiconductor device cleaning composition used in a process of fabricating a semiconductor integrated circuit, for removing a hard mask or a dry etch residue while suppressing damage to a low-dielectric-constant interlayer dielectric film and cobalt or a cobalt alloy, where the liquid semiconductor device cleaning composition contains hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass, at least one selected from amines and azoles at 0.001-5% by mass and water. A semiconductor device can be cleaned by bringing the liquid cleaning composition into contact with the semiconductor device.

Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device

This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.

Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method

The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.

Cleaning liquid composition, method for cleaning semiconductor element, and method for manufacturing semiconductor element

By cleaning with use of a cleaning liquid that contains 10-30% by mass of hydrogen peroxide, 0.005-10% by mass of a quaternary ammonium hydroxide, 0.005-5% by mass of potassium hydroxide, 0.000005-0.005% by mass of an amino polymethylene phosphonic acid and water, a hard mask, an organosiloxane-based thin film, dry etching residue and a photoresist can be removed without corroding a low-dielectric-constant interlayer dielectric film, a wiring material such as copper or an copper alloy, a barrier metal and a barrier dielectric film. According to preferred embodiments of the present invention, damage to copper wiring lines is suppressed even in cases where an acid is added into the cleaning liquid and significant decomposition of hydrogen peroxide is not caused even in cases where titanium is added into the cleaning liquid.

Cleaning liquid for semiconductor elements and cleaning method using same

Provided are a combination welding method and a combination arc welding machine thereof having excellent construction efficiency and preventing a deterioration of toughness of a HAZ by maintaining the current density of each of gas metal arc welding and submerged-arc welding within an appropriate range at the time of welding a steel plate by the combination of the gas metal arc welding using multielectrodes and the submerged-arc welding using multielectrodes. The gas metal arc welding is performed using two or more electrodes, a wire for welding having a wire diameter of 1.4 mm or more is used in the first electrode of the gas metal arc welding, and a current density of the first electrode is set to 320 A/mmor more.

Combination welding method using combination of gas metal arc welding and submerged-arc welding and combination arc welding machine

According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

Growing community of inventors

Tokyo, Japan

Kenji Shimada