Tokyo Electron Limited

Other

Hitachi, Ltd.

Shimizu Construction Co., Ltd.

Tokyo Electron Kyushu Limited

Tokyo Electron Kyuchu Limited

Kenji Sekiguchi

Hiroki Ohno

Satoru Tanaka

Keizo Hirose

Takehiko Orii

Noritaka Uchida

Itaru Kanno

Koukichi Hiroshiro

Koji Kagawa

Tetsuya Sakazaki

Kiyohisa Tateyama

Nobuo Konishi

Kazuya Dobashi

Tsunenaga Nakashima

Tsutae Omori

Kimio Motoda

Teruomi Minami

Kyoko Ikeda

Shuuichi Nishikido

Yasushi Fujii

Kazuyoshi Mizumoto

Masato Nakajo

Takahiro Yasutake

Yasuyoshi Shimazaki

Hiroshi Murakami

Mitsuaki Iwashita

Hiroshi Tanaka

Naoki Shindo

Norihiro Ito

Takuya Mori

Ryuichi Asako

Kazuyuki Nakamura

Gentaro Goshi

Koji Akiyama

Hirokazu Ueda

Tadashi Iino

Kinya Ueno

Sadao Suzuki

Yosuke Kawabuchi

Isao Kojima

Meitoku Aibara

Hiromi Kiyose

Takanori Miyazaki

Kazuki Kosai

Kouzou Tachibana

Takashi Hayakawa

Kouichi Ushiroda

Takashi Yabuta

Takuro Masuzumi

Fumihiro Kamimura

Yoji Iizuka

Tadao Suzuki

Tsukasa Watanabe

Masaru Amai

Toshio Yamashita

Akinori Tajiri

Takeo Nakano

Naoki Umeshita

Yoshimasa Tsuchiya

Dipak Aryal

Rintaro Higuchi

Hiroshi Nagayasu

Hideyasu Furukawa

Kiyoshi Nakamura

Naohiko Hamamura

Antonio Rotondaro

Keiji Nakanishi

Masami Hosoda

Takeshi Uno

Yusaku Hirota

Shouichi Shimose

Yuji Katagiri

Nobuaki Miura

Fumio Fujita

Yoichiro Takeuchi

Tomohide Inoue

A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Vacuum processing apparatus and oxidizing gas removal method

A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

Substrate processing device and etching liquid

A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Substrate cleaning method, processing container cleaning method, and substrate processing device

A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

Substrate processing method and substrate processing apparatus

A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Substrate processing method, substrate processing device and etching liquid

A substrate processing apparatus includes a placing unit, a supply, an embankment and a moving mechanism. The placing unit is configured to place a substrate thereon. The supply is configured to supply a processing liquid onto the substrate placed on the placing unit. The embankment is disposed to surround the substrate placed on the placing unit to suppress an outflow of the processing liquid supplied onto the substrate from the substrate. The moving mechanism is configured to vary a height of the embankment.

Substrate processing apparatus and substrate processing method

A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

Substrate processing method, recording medium and substrate processing apparatus

A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

Substrate cleaning method, substrate cleaning system and memory medium

Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.

Liquid processing method, liquid processing apparatus and storage medium

A substrate processing apparatus according to the present invention is provided with a spin chuck () that holds a substrate (W) and rotates the same. A process liquid supply system (, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle () that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle () that supplies an inert gas to the substrate. A nozzle moving mechanism (, . . . ) is disposed that moves the nozzles () radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.

Substrate processing apparatus, substrate processing method, and storage medium

Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Substrate liquid processing apparatus, substrate liquid processing method, and storage medium having substrate liquid processing program stored therein

Growing community of inventors

Nirasaki, Japan

Kenji Sekiguchi