Hitachi, Ltd.

Nippon Hoso' Kyokai

Consortium for Advanced Semiconductor Materials and Related Technologies

Kenji Sameshima

Tadaaki Hirai

Junichi Yamazaki

Keiichi Shidara

Kazutaka Tsuji

Kenkichi Tanioka

Yukio Takasaki

Tatsuo Makishima

Sachio Ishioka

Tatsuro Kawamura

Hirofumi Ogawa

Takashi Yamashita

Kazuhisa Taketoshi

Mitsuo Kosugi

Yasuhiko Nonaka

Naohiro Goto

Eisuke Inoue

Hirokazu Matsubara

Tsuyoshi Uda

Masaaki Aiba

Takaaki Unnai

Eikyuu Hiruma

Eikyu Hiruma

Misao Kubota

Shiro Suzuki

Takeshi Saito

Mitsuo Usami

Kazuo Takaragi

Masanao Yamamoto

Chizuko Yasunobu

Akira Sato

Shirou Suzuki

Eikiyu Hiruma

Yochizumi Ikeda

Hiroyuki Shinada

Masanari Koguchi

Hiroshi Kakibayashi

Yasuharu Shimomoto

Tetsuya Ooshima

Keiichi Kanehori

Takeshi Kikawa

Takenori Narita

Shigeru Ehata

Yoshizumi Ikeda

Masaki Ito

The CMP technology is provided for a damascene wiring structure having a plural-layer wiring that is excellent in flatness and resolvability of Cu residue. An evaluation substrate is provided for evaluating the condition of a CMP that is employed for configuring a semiconductor device having a plurality of wirings in a vertical direction, and the evaluation substrate comprises: a substrate; a first groove formed on the substrate; a second groove formed on the substrate; and wiring material provided in the first groove and the second groove, wherein a depth of the second groove is shallower than that of the first groove.

Substrate for evaluation

A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits and a sending circuit that sends the identification information. An antenna coupled to said semiconductor chip receives the identification information from said semiconductor chip and transmits the identification information outside of said non-contact semiconductor. The long side length of the semiconductor chip is not greater than 0.5 mm in plane dimension, and the identification information is stored by a pattern printed by an electron beam.

Semiconductor devices and manufacturing method therefor

This Application is intended to provide a method for effectively protecting paper or film-form media against forgery. This can be achieved by, for example, embedding in a paper or film-form medium a thin semiconductor chip up to 0.5 mm square, equipped with an antenna, and characterized in that the side walls of the semiconductor chip are formed using oxide films, and in that multiple such semiconductor chips are separated by etching. Limiting the size of these semiconductor chips to 0.5 mm or less enables improvement against bending and concentrated loads, and separating the semiconductor chips by etching results in semiconductor chips free from cracking and breakage. Also, the oxide films constituting the side walls of the semiconductor chips prevents short-circuiting at edges during connection to the respective antennas. Thus, simplified processes can be adopted.

Semiconductor devices

A scintillator device and an image pickup apparatus using the scintillator, in which the scintillator for converting an input particle or electron beam image into an optical image is applied with a voltage between electrodes formed at the input plane of the electron beam and the output plane of scintillation. This voltage generates an electric field in the scintillator so that scattering of a charged particle beam in the scintillator is prevented and the resolution and S/N ratio can be improved while retaining a large amount of scintillation. Accordingly, the shift amount of low energy charged particle beams from the incident axis, which greatly influences degradation of the resolution and S/N ratio, can be suppressed.

Scintillator device and image pickup apparatus using the same

An image pickup tube is provided with the third electrode to control the potential of the region which is not scanned by an electron beam in the image pickup tube target section including a target electrode and a photo-conductive film. A method for operating this image pickup tube is also disclosed. Thus, undesired image phenomena which are generated when the image pickup tube is used with a relatively high target voltage, e.g., image distortion, shading, a waterfall phenomenon and image inversion phenomenon can be suppressed, thereby realizing a high sensitivity image pickup tube.

Image pickup tube utilizing third electrode and its operating method

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Photoconductive imaging apparatus

An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Image pick-up tube and apparatus having the same

A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

Photoconductive device and method of operating same

An image pick-up tube and a method of fabricating an image pick-up tube and a target section used therewith, in which the target includes at least a conductive film and a photoconductive film on a substrate for photo-electric conversion, and a signal from the target section is read by an electron beam scanning system. At least a part of the surface area outside the effective scanning region of the electron beam scanning side of the target section is formed of a secondary electron emission dampening layer.

Method of fabricating an image pick-up tube and target section used

A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Electric conversion device

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Photoconductive device and method of operating the same

A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Target of image pickup tube having an amorphous semiconductor laminate

A method of making an image pickup tube target (FIG. 1A), etc., using an amorphous photoconductive layer. When an electrode, an amorphous semiconductor layer, etc., are provided on a substrate, the steps of ion etching away a surface of the substrate and forming the electrode are performed so that a target (FIG. 1A) is produced in which no defects are substantially caused in a reproduced image even if a high electric field is applied across the target.

Method of making a photosensor

Growing community of inventors

Hachioji, Japan

Kenji Sameshima