Renesas Electronics Corporation

Mitsubishi Electric Corporation

Kenji Sakata

Tsuyoshi Kida

Yoshihiro Ono

Kentaro Mori

Toshihiko Akiba

Nobuhiro Kinoshita

Shinji Watanabe

Yusuke Yamada

Yosuke Katsura

Shinji Baba

Takuo Funaya

Yuichi Yoshida

Masahiro Abukawa

Shu Murayama

Hideaki Tsuchiya

Nobuyoshi Okumura

Jumpei Konno

Tsuyoshi Kasaura

Tadatoshi Okubo

Reliability of a semiconductor device is improved. The semiconductor device PKGincludes a wiring substrate SUBa semiconductor chip CHPand a capacitor CDC mounted on the upper surfaceof the wiring substrate SUBand a lid LD formed of a metallic plate covering the semiconductor chip CHPand the wiring substrate SUBThe semiconductor chip CHPis bonded to the lid LD via a conductive adhesive layer, and the capacitor CDC, which is thicker than the thickness of the semiconductor chip CHPis disposed in the cut off portionprovided in the lid LD, and is exposed from the lid LD.

Semiconductor device including a circuit for transmitting a signal

Reliability of a semiconductor device is improved. The semiconductor device PKGincludes a wiring substrate SUB, a semiconductor chip CHPand a capacitor CDC mounted on the upper surfaceof the wiring substrate SUB, and a lid LD formed of a metallic plate covering the semiconductor chip CHPand the wiring substrate SUB. The semiconductor chip CHPis bonded to the lid LD via a conductive adhesive layer, and the capacitor CDC, which is thicker than the thickness of the semiconductor chip CHP, is disposed in the cut off portionprovided in the lid LD, and is exposed from the lid LD.

There is a need to improve reliability of the semiconductor device. A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness hof the pillar electrode is measured from the upper surface of the insulation film. Thickness hof the solder layer is measured from the upper surface of the resist layer. Thickness his greater than or equal to a half of thickness hand is smaller than or equal to thickness h.

Semiconductor device

A manufacturing method of a semiconductor device includes preparing a wiring substrate including a first surface, a plurality of first terminals formed on the first surface, and a second surface opposite to the first surface, arranging a first adhesive on the first surface of the wiring substrate, and after the arranging of the first adhesive, mounting a first semiconductor chip, which includes a first front surface, a plurality of first front electrodes formed on the first front surface, a first rear surface opposite to the first front surface, a plurality of first rear electrodes formed on the first rear surface, and a plurality of through electrodes electrically connecting the plurality of first front electrodes to the plurality of first rear electrodes, on the first surface of the wiring substrate via the first adhesive.

Semiconductor device and manufacturing method thereof

In a semiconductor device according to an embodiment, a second semiconductor chip is mounted on a first rear surface of a first semiconductor chip. Also, the first rear surface of the first semiconductor chip includes a first region in which a plurality of first rear electrodes electrically connected to the second semiconductor chip via a protrusion electrode are formed and a second region which is located on a peripheral side relative to the first region and in which a first metal pattern is formed. In addition, a protrusion height of the first metal pattern with respect to the first rear surface is smaller than a protrusion height of each of the plurality of first rear electrodes with respect to the first rear surface.

A method for manufacturing a semiconductor device includes the steps of mounting a Si interposer over a printed wiring substrate, plasma-cleaning an upper surface of the Si interposer, disposing an NCF over the upper surface of the Si interposer, and mounting a semiconductor chip over the upper surface of the Si interposer through the NCF. Also, the method includes the step of electrically coupling each of plural electrodes of a second substrate and each of plural electrode pads of the semiconductor chip with each other through plural bump electrodes by reflow, and the surface of the Si interposer is plasma-cleaned before attaching the NCF to the Si interposer.

Method for manufacturing semiconductor device

The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger.

Chip having a pillar electrode offset from the bonding pad

A semiconductor chip and a wiring board are coupled to each other through conductor posts. The centers of conductor posts situated above openings at the outermost periphery shift from the centers of the openings in a direction away from the center of the semiconductor chip. When a region where each of the conductor posts and an insulating layer are overlapped with each other is designated as an overlapped region, the width of the overlapped region more on the inner side than the opening is smaller than the width of the overlapped region more on the outer side than the opening. Thus, while stress applied to the conductor posts is relaxed, coupling reliability between the semiconductor chip and the wiring board is retained.

A front-end unitincludes: a communication unitand a local storageto be used by a CPUon the board in which the front-end unit itself is arranged; and I/F unitsthat make connections in an accessible manner from the CPUto the communication unitand the local storagein the front-end unit

Disk drive device

A semiconductor device includes a substrate, a semiconductor chip that is bonded to one of the faces of the substrate via bumps, and has a device formation face facing the one of the faces, and a resin that fills the space between the device formation face of the semiconductor chip and the one of the faces of the substrate. The resin includes: a first resin that is formed in a formation region of bumps placed on the outermost circumference of the bumps, and is formed inside the formation region, and a second resin that is formed outside the first resin. The thermal expansion coefficient of the substrate is higher than the thermal expansion coefficient of the first resin. The thermal expansion coefficient of the second resin is higher than the thermal expansion coefficient of the first resin.

Semiconductor device and method for manufacturing the same

A conditional access apparatus receives a filter condition from another conditional access apparatus to set the filter condition to a filter unitthereof. When key information meeting the above-mentioned filter condition is outputted from the filter unit, the conditional access apparatus informs the key information to the other conditional access apparatus, and also informs the filter condition set to the filter unitby the key information control unitto the other conditional access apparatus and acquires key information meeting the above-mentioned filter condition from the other conditional access apparatus.

Conditional access apparatus

A method of manufacturing a semiconductor device, includes mounting a semiconductor chip on a wiring substrate such that one surface of the semiconductor chip is faced to one surface of the wiring substrate, and filling a first resin in a gap between the surface of the wiring substrate and the surface of the semiconductor chip such that part of the first resin protrudes from the gap. In the filling of the first resin, the first resin is injected into the gap by use of a first resin injection nozzle while the first resin injection nozzle is being moved along any one of sides of the semiconductor chip or along two sides of the semiconductor chip which are adjacent to each other.

Semiconductor device and method of manufacturing the same

The extent of a bow of a semiconductor device is suppressed in a case where the fillet width of an underfill resin is asymmetrical. The center positionof a chipis caused to deviate from the center positionof a wiring substratein a direction (the direction of the arrow B) reverse to the deviation direction (the direction of the arrow A) of the center positionof an underfill resinfrom the center positionof the chip. The center positionof a resin for encapsulationis caused to deviate from the center positionof the wiring substratein the same direction (the direction of the arrow A) as the deviation direction (the direction of the arrow A) of the center positionof the underfill resinfrom the center positionof the chip

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Tokyo, Japan

Kenji Sakata