Daido Metal Company Ltd.

Fujimi Incorporated

Other

Mitsubishi Jukogyo Kabushiki Kaisha

Fujima Incorporated

Chuo Denshi Kabushiki Kaisha

Kenji Sakai

Koichi Yamamoto

Katsuyoshi Ina

Takayuki Shibayama

Masaaki Sakamoto

Satoru Kurimoto

Naohisa Kawakami

Tadashi Tanaka

Takashi Inaba

Hiroshi Asano

Tadahiro Kitamura

Koji Ohno

Tsuyoshi Matsuda

Sanae Mori

Kazusei Tamai

Tatsuhiko Hirano

Atsunori Kawamura

Chiyo Horikawa

Junhui Oh

Tsuyoshi Hasegawa

Hideo Ishikawa

Yasuo Inada

Motomu Wada

Eisaku Inoue

Takeshi Wakabayashi

Katsunobu Hori

Yuji Terashima

Noriko Miyairi

Takahiro Umeda

Youji Nagai

Kakumasa Fukuzawa

Teruzo Hiraoka

A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is at least one selected from polysaccharide and polyvinyl alcohol. The polysaccharide is starch, amylopectin, glycogen, cellulose, pectin, hemicellulose, pullulan, or elsinan. Among them, pullulan is preferable. The abrasive is at least one selected from aluminum oxide and silicon dioxide, preferably at least one selected from fumed silica, fumed alumina, and colloidal silica. The polishing composition can be suitably used in polishing for forming wiring a semiconductor device.

Polishing composition and polishing method

A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from the group consisting of carboxylic acid and alpha-amino acid; a corrosion inhibitor; an oxidant; and water. This polishing composition is capable of suppressing the occurrence of the dishing.

Polishing composition

A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0. 

Polishing composition and method for forming wiring structure using the same

A copper-based sliding material comprising sintered copper or sintered copper alloy, and 0.1 to 5 vol. % hard substance particles harder in hardness than said copper or copper alloy, said hard substance particles being substantially evenly dispersed so that, when at least one, randomly selected surface portion or sectional portion of said sintered copper or sintered copper alloy is partitioned into squares each having a side of 20 &#x3bc;m, at least one particle exists in each of squares not less than 80% of the whole squares. The copper-based sliding material has good anti-seizure property and superior resistance to fatigue without containing any lead.

Sliding material made of copper alloy, method of producing same, sliding bearing material, and method of producing same

There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.

A polishing composition comprising the following components (a) to (g):

Polishing composition and polishing method employing it

The method of polishing a copper layer of a substrate is capable of improving a stock removal rate, etc. The method comprises the steps of: supplying a substrate onto an polishing pad of an polishing plate with a copper layer facing the polishing pad; pressing the substrate onto the polishing pad, with a backing pad, by a press head; relatively rotating the press head with respect to the polishing plate, with supplying polishing slurry onto the polishing pad. The backing pad is made of a material whose Asker C hardness is 75-95 and whose compressibility is 10% or less. The polishing slurry includes a chelating agent for chelating copper, an etching agent for etching the surface of copper layer, an oxidizing agent for oxidizing the surface of copper layer, and water.

Method of polishing copper layer of substrate

A copper-based sliding material produced by sintering, comprising at least two phases of copper and/or copper alloys which phases have hardness levels different form each other, and hard particles with an average particle size of 0.1 to 10 &mgr;m which are dispersed in at least one phase with the exception of a softest phase in an amount of 0.1 to 10 vol. % of the whole copper-based sliding material, said sliding material satisfying (H2/H1)&gE;1.2 in which H1 is the Vickers hardness of the softest phase and in which H2 is the Vickers hardness of a phase hardest in hardness including said hard particles.

Copper-based sliding material, method of manufacturing the same, and sliding bearing

Disclosed is a copper alloy sliding material having a metal structure wherein intermetallic compounds exist adjacently to Pb-phase islands and/or Bi-phase islands. Because intermetallic compounds exist between the matrix and the Pb phase and/or the Bi phase, the material can have improved anti-seizure property, since, under load or due to wear, the surface of the material has recessions at the soft Pb and/or Bi phase and the matrix with respect to the intermetallic compounds.

Copper alloy sliding material

Disclosed is a composite sliding material having a steel plate and a sintered copper alloy layer which is bonded to the steel plate. The copper alloy contains, 1.5 to 15 mass % Sn, 1.5 to 15 mass % Bi, 1.5 to 20 volume % of a solid lubricant, and balance of Cu and incidental impurities. The volume ratio of Bi to the solid lubricant is in a range of 0.5 to 2.0. Bi and the solid lubricant improves the copper alloy in sintering property, since Bi melts when sintering because of a low melting point resulting in improved sintering property, and the solid lubricant ensures good anti-seizure property, and deterioration of mechanical strength is prevented by virtue of a phenomenon that the solid lubricant is entrained in Bi.

Composite sliding material

A copper alloy sliding material which can bring about superior resistance to fatigue as well as good anti-seizure property without containing any Pb. The copper alloy sliding material is made to have the structure in which both of the hard copper alloy phase and the soft copper alloy phase coexist in a mixture state. On the surface of the sliding material, the soft copper alloy phase comes to have a shape more concave than that of the hard copper alloy phase when receiving a load or when being in a sliding wear relation, in which concave portions is retained lubricant with the result that the anti-seizure property is enhanced. Further, since the soft phase and the hard phase are made of the same copper alloy, the wettability thereof becomes good, and Ni and etc. contained in the hard copper alloy phase are diffused into the soft copper alloy phase, so that the hardness of the boundary portion defined between the phases come to be gradually varied. Thus, because of the unclear boundary, the load received in the hard phase comes to be spread in a wide range without being concentrated at the boundary, so that the fatigue strength is enhanced.

Sliding material made of copper alloy, method of producing same, and sliding bearing

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Nagoya, Japan

Kenji Sakai