Murata Manufacturing Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Kenji Sakaguchi

Katsuhiro Ikada

Toshiyuki Fuyutsume

Wataru Yamaguchi

Yoshihiro Koshido

Hisashi Yamazaki

Kenta Takagi

Shin Saijo

Masanobu Watanabe

Miki Takamiya

Yuji Yokoyama

Kazuhiro Yoshii

Takaaki Yokoyama

Kunio Minami

Toshiyuki Tajima

Kojiro Komagaki

Kenji Akiyama

Mitsushi Takatori

A magnetic laminate having further suppressed magnetic saturation and higher DC superposition characteristics, a magnetic structure including the same, and an electronic component including the magnetic laminate or the magnetic structure. A magnetic laminate in which magnetic metal layers and non-magnetic metal layers are alternately laminated, wherein the non-magnetic metal layer is disposed between the magnetic metal layers; the magnetic metal layer contains an amorphous material; and the non-magnetic metal layer contains at least one element selected from the group consisting of Cr, Ru, Rh, Ir, Re, and Cu, and has an average thickness of 0.4 nm or more and 1.5 nm or less (i.e., from 0.4 nm to 1.5 nm).

Magnetic laminate, magnetic structure including same, electronic component including magnetic laminate or magnetic structure, and method for producing magnetic laminate

A sintered magnet contains Sm&#x2014;Fe&#x2014;N-based crystal grains and has high coercivity; and a magnetic powder is capable of forming a sintered magnet without lowering the coercivity even if heat is generated in association with the sintering. A sintered magnet comprises a crystal phase composed of a plurality of Sm&#x2014;Fe&#x2014;N-based crystal grains and a nonmagnetic metal phase present between the Sm&#x2014;Fe&#x2014;N crystal grains adjacent to each other, wherein a ratio of Fe peak intensity Ito SmFeN peak intensity Imeasured by an X-ray diffraction method is 0.2 or less. A magnetic powder comprises Sm&#x2014;Fe&#x2014;N-based crystal particles and a nonmagnetic metal layer covering surfaces of the Sm&#x2014;Fe&#x2014;N crystal particles.

Magnetic powder containing Sm&#x2014;Fe&#x2014;N-based crystal particles, sintered magnet produced from same, method for producing said magnetic powder, and method for producing said sintered magnet

An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode. The piezoelectric substrate includes a principal surface with a groove tapered in lateral cross section. The interdigital transducer electrode is arranged on the principal surface such that at least one portion thereof is located in the groove. The interdigital transducer electrode is a laminate including a first conductive layer, a second conductive layer, and a diffusion-preventing layer located between the first conductive layer and the second conductive layer and made of an oxide or nitride of Ti or Cr.

Elastic wave device

A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, and a connecting portion that is electrically connected with the IDT electrode. The surface acoustic wave device further includes a wiring portion, a portion of which is disposed on the connecting portion, and a bump disposed on the wiring portion. The connecting portion includes a comb-shaped portion at an end of the connecting portion on which the wiring portion is disposed.

Surface acoustic wave device and method for manufacturing the same

A surface acoustic wave device includes a surface acoustic wave element, a packaging case, and a packaging electrode. The surface acoustic wave element has a piezoelectric substrate, an interdigital transducer, an electrode pad, an intermediate electrode, an upper electrode, and a bump electrode. The intermediate electrode is preferably made of NiCr including about 15 to about 30 weight percent of Cr. The electrode pad and upper electrode are made of Al. The bump electrode is press-bonded to the packaging electrode with an ultrasonic wave or heat applied to the bump electrode. The resulting surface acoustic wave device has excellent characteristics and the surface acoustic wave element is not removed or peeled from the packaging case during a drop test.

Surface acoustic wave element, surface acoustic wave device using the same, and method for manufacturing surface acoustic wave element and surface acoustic wave device

Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n &minus;n ) /(n &plus;n ) is 0.15 or less, wherein n and n is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.

Methods of forming resist pattern, forming electrode pattern, and manufacturing surface acoustic wave device

A method of forming an electrode pattern of a surface acoustic wave device easily and reliably prevents the occurrence of an abnormality in the shape of a resist pattern. In the electrode pattern forming method, a resist layer is formed on a top surface of a piezoelectric substrate, and then exposed to ultraviolet rays through a photomask provided above the top surface of the piezoelectric substrate to form a resist pattern on the surface of the piezoelectric substrate. Furthermore, a conductor film is formed on the top surface of the piezoelectric substrate, and the resist pattern is removed by a liftoff method to form an electrode pattern of the surface acoustic wave device. Exposure is performed using ultraviolet rays having a wavelength which is completely absorbed into the piezoelectric substrate without reaching the bottom surface of the piezoelectric substrate.

Method of forming electrode pattern of surface acoustic wave device

A surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Surface acoustic wave device

A method of making surface acoustic wave device includes a piezoelectric substrate, a first surface acoustic wave element having at least one interdigital transducer on the piezoelectric substrate, a second surface acoustic wave element having at least one interdigital transducer which is provided on the piezoelectric substrate. The at least one interdigital transducer of the second surface acoustic wave element has a thickness that is different from the interdigital transducer of the first surface acoustic wave element, and the second surface acoustic wave element has a frequency characteristic that is different from that of the first surface acoustic wave element. An insulating film is applied to the first and second surface acoustic wave elements. A thickness of the insulating film at a region on the first surface acoustic wave element is different from the thickness of a region on the second surface acoustic wave.

Method of making surface acoustic wave device

A method for efficiently and inexpensively manufacturing a piezoelectric element that contains highly corrosion resistant electrodes and has excellent and stable electric characteristics is performing such that dicing occurs without forming any protective film beforehand. According to the method, a wafer is formed to have an electrode including an Al alloy disposed on a piezoelectric substrate made of a piezoelectric material. The wafer is cut while being exposed to plasma using a halogen-containing gas while cooling the wafer with cutting water. The cutting water preferably includes a compound that reacts with Al to form a protective film on a surface of an electrode including an Al alloy.

Method and manufacturing piezoelectric device

A method of manufacturing a surface acoustic wave apparatus including the steps of forming a first conductive film, depositing a first resist on the first conductive film and patterning the first resist, dry-etching the first conductive film using the patterned first resist to form IDT electrodes, a short-circuit wiring electrode for establishing electrical connection between IDT electrodes, and a second conductive film provided where the second surface acoustic wave device is constructed, removing the second conductive film, depositing a second resist and heating the second resist, patterning the second resist on the electrodes, forming a second conductive film having a thickness which is different from the first conductive film, removing the second resist to form the electrodes of the second surface acoustic wave device and to expose the electrodes of the first surface acoustic wave device, and disconnecting the short-circuit wiring electrode.

Method of manufacturing surface acoustic wave apparatus

A surface acoustic wave device includes a piezoelectric substrate, and comb-shaped electrodes each having a bus bar and a plurality of electrode fingers disposed on the piezoelectric substrate. At least one of the fingers and the bus bar are connected to each other via at least two different connecting portions at two different locations.

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Komatsu, Japan

Kenji Sakaguchi